Inventor
BOMBERGER CORY C
US11 patents
Patents
11 patentsUS11222977B2Jan 11, 2022
Source/drain diffusion barrier for germanium NMOS transistors
INTEL CORP8 citations85
US11735670B2Aug 22, 2023
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors
INTEL CORP0 citations62
US11699756B2Jul 11, 2023
Source/drain diffusion barrier for germanium nMOS transistors
INTEL CORP0 citations62
US11189730B2Nov 30, 2021
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors
INTEL CORP0 citations62
US11101356B2Aug 24, 2021
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors
INTEL CORP0 citations62
US11056592B2Jul 6, 2021
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer
INTEL CORP1 citations60
US11430787B2Aug 30, 2022
Forming crystalline source/drain contacts on semiconductor devices
INTEL CORP0 citations58
US12550401B2Feb 10, 2026
Doped STI to reduce source/drain diffusion for germanium NMOS transistors
INTEL CORP0 citations52
US11575005B2Feb 7, 2023
Asymmetrical semiconductor nanowire field-effect transistor
INTEL CORP0 citations51
US11482457B2Oct 25, 2022
Substrate defect blocking layers for strained channel semiconductor devices
INTEL CORP0 citations51
US11404575B2Aug 2, 2022
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer
INTEL CORP0 citations50