Inventor
TSANG DAH W
US6 patents
Patents
6 patentsUS5283201AFeb 1, 1994
High density power device fabrication process
ADVANCED POWER TECHNOLOGY248 citations97
US5528058AJun 18, 1996
IGBT device with platinum lifetime control and reduced gaw
ADVANCED POWER TECHNOLOGY111 citations96
US5262336ANov 16, 1993
IGBT process to produce platinum lifetime control
ADVANCED POWER TECHNOLOGY140 citations95
US5045903ASep 3, 1991
Topographic pattern delineated power MOSFET with profile tailored recessed source
ADVANCED POWER TECHNOLOGY87 citations95
US5019522AMay 28, 1991
Method of making topographic pattern delineated power MOSFET with profile tailored recessed source
ADVANCED POWER TECHNOLOGY103 citations95
US5283202AFeb 1, 1994
IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
ADVANCED POWER TECHNOLOGY46 citations88