Inventor
MIZUNO SHOJI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “MIZUNO SHOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
17 patentsUS6524890B2Feb 25, 2003
Method for manufacturing semiconductor device having element isolation structure
DENSO CORP78 citations97
US9818856B2Nov 14, 2017
Semiconductor device with high electron mobility transistor
DENSO CORP33 citations94
US6831331B2Dec 14, 2004
Power MOS transistor for absorbing surge current
DENSO CORP41 citations92
US6803634B2Oct 12, 2004
Stabilization in device characteristics of a bipolar transistor that is included in a semiconductor device with a CMOSFET
DENSO CORP26 citations91
US9515067B2Dec 6, 2016
Semiconductor device having switching element and free wheel diode and method for controlling the same
DENSO CORP9 citations83
US7132347B2Nov 7, 2006
Semiconductor device with trench structure and method for manufacturing the same
DENSO CORP5 citations74
US6879029B2Apr 12, 2005
Semiconductor device having element isolation structure
DENSO CORP9 citations73
US10374079B2Aug 6, 2019
Silicon carbide semiconductor device and method for manufacturing same
DENSO CORP3 citations71
US7982508B2Jul 19, 2011
Switching circuit and driving circuit for transistor
DENSO CORP3 citations63
US7799667B2Sep 21, 2010
Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode
DENSO CORP4 citations63
US10446649B2Oct 15, 2019
Silicon carbide semiconductor device
DENSO CORP1 citations62
US7671636B2Mar 2, 2010
Switching circuit and driving circuit for transistor
DENSO CORP3 citations62
US7800195B2Sep 21, 2010
Semiconductor apparatus having temperature sensing diode
DENSO CORP3 citations61
US12532503B2Jan 20, 2026
Silicon carbide semiconductor device
DENSO CORP0 citations52
US7838909B2Nov 23, 2010
Semiconductor device with trench structure
DENSO CORP0 citations52
US6818942B2Nov 16, 2004
Non-volatile semiconductor storage device having conductive layer surrounding floating gate
DENSO CORP1 citations51
US9954073B2Apr 24, 2018
Method for manufacturing silicon carbide semiconductor device
DENSO CORP0 citations42
TOYOTA MOTOR CO LTD
5 patentsUS10388527B2Aug 20, 2019
Method of manufacturing semiconductor device
TOYOTA MOTOR CO LTD1 citations59
US10153345B2Dec 11, 2018
Insulated gate switching device and method for manufacturing the same
TOYOTA MOTOR CO LTD0 citations42
US10068972B2Sep 4, 2018
Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage
TOYOTA MOTOR CO LTD0 citations42
US10128344B2Nov 13, 2018
Semiconductor device
TOYOTA MOTOR CO LTD0 citations41
US9871098B2Jan 16, 2018
Semiconductor device with suppressed decrease in breakdown voltage of an insulation film and manufacturing method of the same
TOYOTA MOTOR CO LTD0 citations41
NEC CORP
3 patentsUS5038389AAug 6, 1991
Encoding of a picture signal in consideration of contrast in each picture and decoding corresponding to the encoding
NEC CORP38 citations92
US5206725AApr 27, 1993
Method and apparatus for coding/decoding image signal providing accurate determination of an image contour and efficient compression coding
NEC CORP2 citations63
US4722002AJan 26, 1988
Method and apparatus for encoding/decoding image signal
NEC CORP6 citations60
NIPPON ELECTRIC CO
3 patentsUS4344086AAug 10, 1982
Encoder for encoding a multilevel pel signal sequence with probability representative mode codes allotted to prediction error codes for each pel signal and a decoder therefor
NIPPON ELECTRIC CO23 citations82
US4215374AJul 29, 1980
Encoding device comprising predictors for thinned and unthinned patterns
NIPPON ELECTRIC CO26 citations82
US4204232AMay 20, 1980
Pattern transmission system comprising an encoder for encoding partial thinned patterns in two scanning lines along only one boundary line
NIPPON ELECTRIC CO25 citations82