P

Inventor

GARBIS DENNIS

US16 patents
⚠️ This page may combine multiple inventors who share the name “GARBIS DENNIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GEN INSTRUMENT CORP

6 patents
US4499354AFeb 12, 1985

Susceptor for radiant absorption heater system

GEN INSTRUMENT CORP571 citations94
US4522149AJun 11, 1985

Reactor and susceptor for chemical vapor deposition process

GEN INSTRUMENT CORP80 citations93
US4293755AOct 6, 1981

Method of cooling induction-heated vapor deposition apparatus and cooling apparatus therefor

GEN INSTRUMENT CORP25 citations80
US5640043AJun 17, 1997

High voltage silicon diode with optimum placement of silicon-germanium layers

GEN INSTRUMENT CORP10 citations71
US4284867AAug 18, 1981

Chemical vapor deposition reactor with infrared reflector

GEN INSTRUMENT CORP19 citations71
US4238436ADec 9, 1980

Method of obtaining polycrystalline silicon

GEN INSTRUMENT CORP11 citations71

GI CORP

3 patents
US5432121AJul 11, 1995

Method for fabricating a multilayer epitaxial structure

GI CORP27 citations91
US5360509ANov 1, 1994

Low cost method of fabricating epitaxial semiconductor devices

GI CORP25 citations90
US5571329ANov 5, 1996

Gas flow system for CVD reactor

GI CORP10 citations68

GEN SEMICONDUCTOR INC

2 patents
US5882986AMar 16, 1999

Semiconductor chips having a mesa structure provided by sawing

GEN SEMICONDUCTOR INC48 citations90
US6248651B1Jun 19, 2001

Low cost method of fabricating transient voltage suppressor semiconductor devices or the like

GEN SEMICONDUCTOR INC3 citations61

G I CORP

2 patents
US5298457AMar 29, 1994

Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material

G I CORP22 citations88
US5342805AAug 30, 1994

Method of growing a semiconductor material by epilaxy

G I CORP10 citations66

HIRTZ REINHOLD

1 patent
US5324685AJun 28, 1994

Method for fabricating a multilayer epitaxial structure

HIRTZ REINHOLD7 citations65

HILL LAWRENCE

1 patent
US4271235AJun 2, 1981

Method of obtaining polycrystalline silicon and workpiece useful therein

HILL LAWRENCE4 citations55

(unassigned)

1 patent
US5635414AJun 3, 1997

Low cost method of fabricating shallow junction, Schottky semiconductor devices

0 citations39