P

Inventor

COLLINS KENNETH S

US224 patents
⚠️ This page may combine multiple inventors who share the name “COLLINS KENNETH S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

48 patents
US9741546B2Aug 22, 2017

Symmetric plasma process chamber

APPLIED MATERIALS INC385 citations99
US7695590B2Apr 13, 2010

Chemical vapor deposition plasma reactor having plural ion shower grids

APPLIED MATERIALS INC195 citations99
US7429532B2Sep 30, 2008

Semiconductor substrate process using an optically writable carbon-containing mask

APPLIED MATERIALS INC539 citations99
US7422775B2Sep 9, 2008

Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing

APPLIED MATERIALS INC535 citations99
US7393765B2Jul 1, 2008

Low temperature CVD process with selected stress of the CVD layer on CMOS devices

APPLIED MATERIALS INC562 citations99
US7335611B2Feb 26, 2008

Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer

APPLIED MATERIALS INC535 citations99
US7323401B2Jan 29, 2008

Semiconductor substrate process using a low temperature deposited carbon-containing hard mask

APPLIED MATERIALS INC580 citations99
US7312148B2Dec 25, 2007

Copper barrier reflow process employing high speed optical annealing

APPLIED MATERIALS INC537 citations99
US7312162B2Dec 25, 2007

Low temperature plasma deposition process for carbon layer deposition

APPLIED MATERIALS INC544 citations99
US7291360B2Nov 6, 2007

Chemical vapor deposition plasma process using plural ion shower grids

APPLIED MATERIALS INC186 citations99
US7244474B2Jul 17, 2007

Chemical vapor deposition plasma process using an ion shower grid

APPLIED MATERIALS INC195 citations99
US7109098B1Sep 19, 2006

Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing

APPLIED MATERIALS INC551 citations99
US6167834B1Jan 2, 2001

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC367 citations99
US6108189AAug 22, 2000

Electrostatic chuck having improved gas conduits

APPLIED MATERIALS INC255 citations99
US6095084AAug 1, 2000

High density plasma process chamber

APPLIED MATERIALS INC250 citations99
US5888414AMar 30, 1999

Plasma reactor and processes using RF inductive coupling and scavenger temperature control

APPLIED MATERIALS INC203 citations99
US5874361AFeb 23, 1999

Method of processing a wafer within a reaction chamber

APPLIED MATERIALS INC172 citations99
US5849136ADec 15, 1998

High frequency semiconductor wafer processing apparatus and method

APPLIED MATERIALS INC188 citations99
US5707486AJan 13, 1998

Plasma reactor using UHF/VHF and RF triode source, and process

APPLIED MATERIALS INC201 citations99
US5684669ANov 4, 1997

Method for dechucking a workpiece from an electrostatic chuck

APPLIED MATERIALS INC125 citations99
US5618382AApr 8, 1997

High-frequency semiconductor wafer processing apparatus and method

APPLIED MATERIALS INC125 citations99
US5423945AJun 13, 1995

Selectivity for etching an oxide over a nitride

APPLIED MATERIALS INC220 citations99
US5362526ANov 8, 1994

Plasma-enhanced CVD process using TEOS for depositing silicon oxide

APPLIED MATERIALS INC484 citations99
US5354715AOct 11, 1994

Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC132 citations99
US5000113AMar 19, 1991

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC1,100 citations99
US4892753AJan 9, 1990

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989

CVD of silicon oxide using TEOS decomposition and in-situ planarization process

APPLIED MATERIALS INC522 citations99
US10580620B2Mar 3, 2020

Symmetric plasma process chamber

APPLIED MATERIALS INC38 citations98
US10546728B2Jan 28, 2020

Symmetric plasma process chamber

APPLIED MATERIALS INC39 citations98
US10535502B2Jan 14, 2020

Symmetric plasma process chamber

APPLIED MATERIALS INC35 citations98
US10453656B2Oct 22, 2019

Symmetric plasma process chamber

APPLIED MATERIALS INC36 citations98
US10312056B2Jun 4, 2019

Distributed electrode array for plasma processing

APPLIED MATERIALS INC39 citations98
US8034734B2Oct 11, 2011

Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus

APPLIED MATERIALS INC90 citations98
US7967944B2Jun 28, 2011

Method of plasma load impedance tuning by modulation of an unmatched low power RF generator

APPLIED MATERIALS INC57 citations98
US7767561B2Aug 3, 2010

Plasma immersion ion implantation reactor having an ion shower grid

APPLIED MATERIALS INC68 citations98
US7696117B2Apr 13, 2010

Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

APPLIED MATERIALS INC132 citations98
US7666464B2Feb 23, 2010

RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor

APPLIED MATERIALS INC63 citations98
US7291545B2Nov 6, 2007

Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage

APPLIED MATERIALS INC73 citations98
US7183177B2Feb 27, 2007

Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement

APPLIED MATERIALS INC119 citations98
US7137354B2Nov 21, 2006

Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage

APPLIED MATERIALS INC63 citations98
US7094670B2Aug 22, 2006

Plasma immersion ion implantation process

APPLIED MATERIALS INC79 citations98
US7037813B2May 2, 2006

Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

APPLIED MATERIALS INC76 citations98
US6939434B2Sep 6, 2005

Externally excited torroidal plasma source with magnetic control of ion distribution

APPLIED MATERIALS INC72 citations98
US6721162B2Apr 13, 2004

Electrostatic chuck having composite dielectric layer and method of manufacture

APPLIED MATERIALS INC76 citations98
US6589437B1Jul 8, 2003

Active species control with time-modulated plasma

APPLIED MATERIALS INC110 citations98
US6551446B1Apr 22, 2003

Externally excited torroidal plasma source with a gas distribution plate

APPLIED MATERIALS INC96 citations98
US6518195B1Feb 11, 2003

Plasma reactor using inductive RF coupling, and processes

APPLIED MATERIALS INC162 citations98
US6444137B1Sep 3, 2002

Method for processing substrates using gaseous silicon scavenger

APPLIED MATERIALS INC127 citations98

SUN JENNIFER Y

1 patent

CRUSE JAMES P

1 patent

Showing the top 50 of 224 patents by PatentIndex Score.