Inventor
WANG DAVID N K
US8 patents
Patents
8 patentsUS5354715AOct 11, 1994
Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC132 citations99
US4854263AAug 8, 1989
Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
APPLIED MATERIALS INC791 citations99
US5300460AApr 5, 1994
UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
APPLIED MATERIALS INC109 citations98
US5210466AMay 11, 1993
VHF/UHF reactor system
APPLIED MATERIALS INC124 citations98
US6040022AMar 21, 2000
PECVD of compounds of silicon from silane and nitrogen
APPLIED MATERIALS INC57 citations96
US5354387AOct 11, 1994
Boron phosphorus silicate glass composite layer on semiconductor wafer
APPLIED MATERIALS INC44 citations95
US5166101ANov 24, 1992
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
APPLIED MATERIALS INC73 citations95
US5773100AJun 30, 1998
PECVD of silicon nitride films
APPLIED MATERIALS INC32 citations92