P

Inventor

MAYDAN DAN

US103 patents
⚠️ This page may combine multiple inventors who share the name “MAYDAN DAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

46 patents
US7110629B2Sep 19, 2006

Optical ready substrates

APPLIED MATERIALS INC314 citations99
US6825134B2Nov 30, 2004

Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow

APPLIED MATERIALS INC595 citations99
US6167834B1Jan 2, 2001

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC367 citations99
US6108189AAug 22, 2000

Electrostatic chuck having improved gas conduits

APPLIED MATERIALS INC255 citations99
US5849136ADec 15, 1998

High frequency semiconductor wafer processing apparatus and method

APPLIED MATERIALS INC188 citations99
US5618382AApr 8, 1997

High-frequency semiconductor wafer processing apparatus and method

APPLIED MATERIALS INC125 citations99
US5362526ANov 8, 1994

Plasma-enhanced CVD process using TEOS for depositing silicon oxide

APPLIED MATERIALS INC484 citations99
US5354715AOct 11, 1994

Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC132 citations99
US5186718AFeb 16, 1993

Staged-vacuum wafer processing system and method

APPLIED MATERIALS INC998 citations99
US5000113AMar 19, 1991

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC1,100 citations99
US4962063AOct 9, 1990

Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing

APPLIED MATERIALS INC455 citations99
US4892753AJan 9, 1990

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989

CVD of silicon oxide using TEOS decomposition and in-situ planarization process

APPLIED MATERIALS INC522 citations99
US4854263AAug 8, 1989

Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films

APPLIED MATERIALS INC791 citations99
US4668365AMay 26, 1987

Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition

APPLIED MATERIALS INC229 citations99
US7043106B2May 9, 2006

Optical ready wafers

APPLIED MATERIALS INC297 citations98
US6721162B2Apr 13, 2004

Electrostatic chuck having composite dielectric layer and method of manufacture

APPLIED MATERIALS INC76 citations98
US6503375B1Jan 7, 2003

Electroplating apparatus using a perforated phosphorus doped consumable anode

APPLIED MATERIALS INC93 citations98
US6170428B1Jan 9, 2001

Symmetric tunable inductively coupled HDP-CVD reactor

APPLIED MATERIALS INC430 citations98
US6109206AAug 29, 2000

Remote plasma source for chamber cleaning

APPLIED MATERIALS INC138 citations98
US5885358AMar 23, 1999

Gas injection slit nozzle for a plasma process reactor

APPLIED MATERIALS INC203 citations98
US5882165AMar 16, 1999

Multiple chamber integrated process system

APPLIED MATERIALS INC789 citations98
US5855681AJan 5, 1999

Ultra high throughput wafer vacuum processing system

APPLIED MATERIALS INC1,143 citations98
US5746875AMay 5, 1998

Gas injection slit nozzle for a plasma process reactor

APPLIED MATERIALS INC169 citations98
US5720818AFeb 24, 1998

Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck

APPLIED MATERIALS INC150 citations98
US5643394AJul 1, 1997

Gas injection slit nozzle for a plasma process reactor

APPLIED MATERIALS INC215 citations98
US5300460AApr 5, 1994

UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers

APPLIED MATERIALS INC109 citations98
US5292393AMar 8, 1994

Multichamber integrated process system

APPLIED MATERIALS INC386 citations98
US5215619AJun 1, 1993

Magnetic field-enhanced plasma etch reactor

APPLIED MATERIALS INC194 citations98
US5210466AMay 11, 1993

VHF/UHF reactor system

APPLIED MATERIALS INC124 citations98
US4951601AAug 28, 1990

Multi-chamber integrated process system

APPLIED MATERIALS INC1,271 citations98
US4842683AJun 27, 1989

Magnetic field-enhanced plasma etch reactor

APPLIED MATERIALS INC410 citations98
US6893907B2May 17, 2005

Fabrication of silicon-on-insulator structure using plasma immersion ion implantation

APPLIED MATERIALS INC127 citations97
US6414834B1Jul 2, 2002

Dielectric covered electrostatic chuck

APPLIED MATERIALS INC56 citations96
USRE36623EMar 21, 2000

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC79 citations96
US6040022AMar 21, 2000

PECVD of compounds of silicon from silane and nitrogen

APPLIED MATERIALS INC57 citations96
US6020270AFeb 1, 2000

Bomine and iodine etch process for silicon and silicides

APPLIED MATERIALS INC47 citations96
US5904776AMay 18, 1999

Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck

APPLIED MATERIALS INC52 citations96
US5871811AFeb 16, 1999

Method for protecting against deposition on a selected region of a substrate

APPLIED MATERIALS INC69 citations96
US5755886AMay 26, 1998

Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing

APPLIED MATERIALS INC91 citations96
US5399387AMar 21, 1995

Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates

APPLIED MATERIALS INC127 citations96
US5204288AApr 20, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material

APPLIED MATERIALS INC67 citations96
US5098198AMar 24, 1992

Wafer heating and monitor module and method of operation

APPLIED MATERIALS INC92 citations96
US4618262AOct 21, 1986

Laser interferometer system and method for monitoring and controlling IC processing

APPLIED MATERIALS INC209 citations96
US4412885ANov 1, 1983

Materials and methods for plasma etching of aluminum and aluminum alloys

APPLIED MATERIALS INC54 citations96
US4376672AMar 15, 1983

Materials and methods for plasma etching of oxides and nitrides of silicon

APPLIED MATERIALS INC67 citations96

APPLIED KOMATSU TECHNOLOGY INC

2 patents

SUNPOWER CORP

1 patent

(unassigned)

1 patent

Showing the top 50 of 103 patents by PatentIndex Score.