Inventor
OHBAYASHI SHIGEKI
JP66 patents
⚠️ This page may combine multiple inventors who share the name “OHBAYASHI SHIGEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
34 patentsUS5124589AJun 23, 1992
Semiconductor integrated circuit capable of synchronous and asynchronous operations and operating method therefor
MITSUBISHI ELECTRIC CORP172 citations99
US5991223ANov 23, 1999
Synchronous semiconductor memory device operable in a burst mode
MITSUBISHI ELECTRIC CORP86 citations96
US5666324ASep 9, 1997
Clock synchronous semiconductor memory device having current consumption reduced
MITSUBISHI ELECTRIC CORP61 citations95
US5659513AAug 19, 1997
Static semiconductor memory device having improved characteristics
MITSUBISHI ELECTRIC CORP31 citations95
US5544105AAug 6, 1996
Static semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writing
MITSUBISHI ELECTRIC CORP29 citations95
US5491655AFeb 13, 1996
Semiconductor memory device having non-selecting level generation circuitry for providing a low potential during reading mode and high level potential during another operation mode
MITSUBISHI ELECTRIC CORP38 citations95
US6388857B1May 14, 2002
Semiconductor circuit device with improved surge resistance
MITSUBISHI ELECTRIC CORP18 citations93
US6373760B1Apr 16, 2002
Static type semiconductor memory device adopting a redundancy system
MITSUBISHI ELECTRIC CORP31 citations93
US5602798AFeb 11, 1997
Synchronous semiconductor memory device operable in a snooze mode
MITSUBISHI ELECTRIC CORP28 citations93
US5555522ASep 10, 1996
Semiconductor memory having redundant cells
MITSUBISHI ELECTRIC CORP36 citations93
US5216298AJun 1, 1993
ECL input buffer for BiCMOS
MITSUBISHI ELECTRIC CORP25 citations93
US6574159B2Jun 3, 2003
Semiconductor memory device and testing method therefor
MITSUBISHI ELECTRIC CORP51 citations92
US6556058B2Apr 29, 2003
Power on reset circuit
MITSUBISHI ELECTRIC CORP24 citations92
US6469552B2Oct 22, 2002
Power on reset circuit
MITSUBISHI ELECTRIC CORP23 citations92
US6229365B1May 8, 2001
Semiconductor integrated circuit device operating stably at a plurality of power supply voltage levels
MITSUBISHI ELECTRIC CORP21 citations92
US6141269AOct 31, 2000
Semiconductor integrated circuit device using BiCMOS technology
MITSUBISHI ELECTRIC CORP40 citations92
US5703510ADec 30, 1997
Power on reset circuit for generating reset signal at power on
MITSUBISHI ELECTRIC CORP42 citations92
US5663905ASep 2, 1997
Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same
MITSUBISHI ELECTRIC CORP35 citations92
US5629900AMay 13, 1997
Semiconductor memory device operable to write data accurately at high speed
MITSUBISHI ELECTRIC CORP20 citations92
US5506805AApr 9, 1996
Static semiconductor memory device having circuitry for enlarging write recovery margin
MITSUBISHI ELECTRIC CORP25 citations92
US5274597ADec 28, 1993
Semiconductor memory device capable of driving divided word lines at high speed
MITSUBISHI ELECTRIC CORP37 citations92
US5684750ANov 4, 1997
Semiconductor memory device with a sense amplifier including two types of amplifiers
MITSUBISHI ELECTRIC CORP52 citations87
US6479860B2Nov 12, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP18 citations84
US6320802B1Nov 20, 2001
Program circuit suppressing stand-by current and permitting highly reliable operation, and semiconductor memory device using the program circuit
MITSUBISHI ELECTRIC CORP18 citations84
US5515326AMay 7, 1996
Static semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writing
MITSUBISHI ELECTRIC CORP16 citations81
US6521951B2Feb 18, 2003
Semiconductor circuit device with improved surge resistance
MITSUBISHI ELECTRIC CORP13 citations77
US6597041B2Jul 22, 2003
Semiconductor static random access memory device
MITSUBISHI ELECTRIC CORP11 citations74
US6314037B1Nov 6, 2001
Semiconductor integrated circuit device using BiCMOS technology
MITSUBISHI ELECTRIC CORP12 citations74
US6301678B1Oct 9, 2001
Test circuit for reducing test time in semiconductor memory device having multiple data input/output terminals
MITSUBISHI ELECTRIC CORP11 citations74
US5781468AJul 14, 1998
Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same
MITSUBISHI ELECTRIC CORP13 citations74
US5734281AMar 31, 1998
Semiconductor integrated circuit for outputting an intermediate potential
MITSUBISHI ELECTRIC CORP9 citations74
US5138201AAug 11, 1992
Sense amplifier operable under variable power supply voltage
MITSUBISHI ELECTRIC CORP13 citations74
US4977337ADec 11, 1990
Bi-CMOS logic circuit
MITSUBISHI ELECTRIC CORP7 citations74
US6088820AJul 11, 2000
Static semiconductor memory device having test mode
MITSUBISHI ELECTRIC CORP14 citations67
RENESAS TECH CORP
10 patentsUS6812574B2Nov 2, 2004
Semiconductor storage device and method of fabricating the same
RENESAS TECH CORP150 citations99
US7570525B2Aug 4, 2009
Semiconductor memory device with adjustable selected work line potential under low voltage condition
RENESAS TECH CORP53 citations98
US6976200B1Dec 13, 2005
Semiconductor integrated circuit having bonding optional function
RENESAS TECH CORP12 citations84
US6741510B2May 25, 2004
Semiconductor memory device capable of performing burn-in test at high speed
RENESAS TECH CORP14 citations83
US6704238B2Mar 9, 2004
Semiconductor memory device including data bus pairs respectively dedicated to data writing and data reading
RENESAS TECH CORP18 citations82
US7076705B2Jul 11, 2006
Semiconductor integrated circuit having bonding optional function
RENESAS TECH CORP7 citations74
US7038925B1May 2, 2006
Static semiconductor memory device having T-type bit line structure
RENESAS TECH CORP9 citations74
US6781869B2Aug 24, 2004
Semiconductor memory
RENESAS TECH CORP10 citations74
US6710634B2Mar 23, 2004
Power on reset circuit
RENESAS TECH CORP9 citations74
US6714478B2Mar 30, 2004
Semiconductor memory device having divided word line structure
RENESAS TECH CORP10 citations73
NII KOJI
2 patentsRENESAS ELECTRONICS CORP
2 patentsTOMITA HIDEMOTO
1 patentMITSUBISHI KABUSHIKI KAISHA
1 patentShowing the top 50 of 66 patents by PatentIndex Score.