Inventor
LEE KYU-PIL
KR22 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYU-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS5959322ASep 28, 1999
Isolated SOI memory structure with vertically formed transistor and storage capacitor in a substrate
SAMSUNG ELECTRONICS CO LTD59 citations96
US6242809B1Jun 5, 2001
Integrated circuit memory devices including titanium nitride bit lines
SAMSUNG ELECTRONICS CO LTD16 citations92
US6218272B1Apr 17, 2001
Method for fabricating conductive pad
SAMSUNG ELECTRONICS CO LTD20 citations92
US6200855B1Mar 13, 2001
Semiconductor memory device, and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD51 citations92
US6184079B1Feb 6, 2001
Method for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US6074918AJun 13, 2000
Methods of fabrication DRAM transistor cells with a self-aligned storage electrode contact
SAMSUNG ELECTRONICS CO LTD18 citations92
US5969395AOct 19, 1999
Integrated circuit memory devices with high and low dopant concentration regions of different diffusivities
SAMSUNG ELECTRONICS CO LTD27 citations92
US5936272AAug 10, 1999
DRAM transistor cells with a self-aligned storage electrode contact
SAMSUNG ELECTRONICS CO LTD32 citations92
US5748521AMay 5, 1998
Metal plug capacitor structures for integrated circuit devices and related methods
SAMSUNG ELECTRONICS CO LTD31 citations92
US5663092ASep 2, 1997
Methods of fabricating a transistor cell with a high aspect ratio buried contact
SAMSUNG ELECTRONICS CO LTD40 citations92
US5466628ANov 14, 1995
Method of manufacturing trench capacitor with a recessed field oxide layer
SAMSUNG ELECTRONICS CO LTD32 citations92
US5324680AJun 28, 1994
Semiconductor memory device and the fabrication method thereof
SAMSUNG ELECTRONICS CO LTD25 citations92
US6156636ADec 5, 2000
Method of manufacturing a semiconductor device having self-aligned contact holes
SAMSUNG ELECTRONICS CO LTD16 citations83
US6703306B2Mar 9, 2004
Methods of fabricating integrated circuit memories including titanium nitride bit lines
SAMSUNG ELECTRONICS CO LTD10 citations74
US6306719B1Oct 23, 2001
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations74
US6162672ADec 19, 2000
Method for forming integrated circuit memory devices with high and low dopant concentration regions of different diffusivities
SAMSUNG ELECTRONICS CO LTD6 citations74
US11251307B2Feb 15, 2022
Device comprising 2D material
SAMSUNG ELECTRONICS CO LTD2 citations73
US9349724B2May 24, 2016
Semiconductor device having capacitors
SAMSUNG ELECTRONICS CO LTD6 citations70
US5208470AMay 4, 1993
Semiconductor memory device with a stacked capacitor
SAMSUNG ELECTRONICS CO LTD14 citations70
US5508564AApr 16, 1996
Semiconductor device having an improved packing density and high reliability
SAMSUNG ELECTRONICS CO LTD6 citations62