P

Inventor

SHIN YUN-SEUNG

KR33 patents
⚠️ This page may combine multiple inventors who share the name “SHIN YUN-SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US6487117B1Nov 26, 2002

Method for programming NAND-type flash memory device using bulk bias

SAMSUNG ELECTRONICS CO LTD57 citations96
US5940716AAug 17, 1999

Methods of forming trench isolation regions using repatterned trench masks

SAMSUNG ELECTRONICS CO LTD177 citations96
US6026039AFeb 15, 2000

Parallel test circuit for semiconductor memory

SAMSUNG ELECTRONICS CO LTD44 citations93
US5852572ADec 22, 1998

Small-sized static random access memory cell

SAMSUNG ELECTRONICS CO LTD26 citations93
US7652926B2Jan 26, 2010

Nonvolatile semiconductor memory device including a cell string with dummy cells

SAMSUNG ELECTRONICS CO LTD32 citations92
US7582941B2Sep 1, 2009

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations92
US7427531B2Sep 23, 2008

Phase change memory devices employing cell diodes and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD27 citations92
US5965939AOct 12, 1999

Semiconductor device and a method of manufacture

SAMSUNG ELECTRONICS CO LTD19 citations92
US5488007AJan 30, 1996

Method of manufacture of a semiconductor device

SAMSUNG ELECTRONICS CO LTD43 citations92
US5414302AMay 9, 1995

Semiconductor device with a multilayered contact structure having a boro-phosphate silicate glass planarizing layer

SAMSUNG ELECTRONICS CO LTD29 citations92
US4948990AAug 14, 1990

BiCMOS inverter circuit

SAMSUNG ELECTRONICS CO LTD23 citations92
US5902126AMay 11, 1999

Methods for forming integrated circuit capacitor electrodes including surrounding insulating sidewalls and spacers

SAMSUNG ELECTRONICS CO LTD28 citations90
US7573411B2Aug 11, 2009

Digital-to-analog converter, display panel driver having the same, and digital-to-analog converting method

SAMSUNG ELECTRONICS CO LTD10 citations84
US6490223B1Dec 3, 2002

Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US5879984AMar 9, 1999

Methods for fabricating capacitor structures using a photoresist layer

SAMSUNG ELECTRONICS CO LTD10 citations74
US5732028AMar 24, 1998

Reference voltage generator made of BiMOS transistors

SAMSUNG ELECTRONICS CO LTD16 citations74
US5930621AJul 27, 1999

Methods for forming vertical electrode structures and related structures

SAMSUNG ELECTRONICS CO LTD16 citations71
US5960293ASep 28, 1999

Methods including oxide masks for fabricating capacitor structures for integrated circuit devices

SAMSUNG ELECTRONICS CO LTD15 citations70
US5208470AMay 4, 1993

Semiconductor memory device with a stacked capacitor

SAMSUNG ELECTRONICS CO LTD14 citations70
US5523255AJun 4, 1996

Method for forming a device isolation film of a semiconductor device

SAMSUNG ELECTRONICS CO LTD10 citations68
US7994493B2Aug 9, 2011

Phase change memory devices employing cell diodes and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US8043869B2Oct 25, 2011

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7973483B2Jul 5, 2011

Light emitting pixel and apparatus for driving the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US5858860AJan 12, 1999

Methods of fabricating field isolated semiconductor devices including step reducing regions

SAMSUNG ELECTRONICS CO LTD4 citations60
US5019881AMay 28, 1991

Nonvolatile semiconductor memory component

SAMSUNG ELECTRONICS CO LTD4 citations54
US7952918B2May 31, 2011

Method of operating a magnetoresistive RAM

SAMSUNG ELECTRONICS CO LTD0 citations52
US7851878B2Dec 14, 2010

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7791929B2Sep 7, 2010

Magnetoresistive RAM and associated methods

SAMSUNG ELECTRONICS CO LTD0 citations52
US7605473B2Oct 20, 2009

Nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD1 citations52
US6816429B2Nov 9, 2004

Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same

SAMSUNG ELECTRONICS CO LTD0 citations52

SAMSUNG EECTRONICS CO LTD

1 patent

SAMSUNG ELECTRONCIS CO LTD

1 patent

SHIN YUN SEUNG

1 patent