Inventor
SHIN YUN-SEUNG
KR33 patents
⚠️ This page may combine multiple inventors who share the name “SHIN YUN-SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS6487117B1Nov 26, 2002
Method for programming NAND-type flash memory device using bulk bias
SAMSUNG ELECTRONICS CO LTD57 citations96
US5940716AAug 17, 1999
Methods of forming trench isolation regions using repatterned trench masks
SAMSUNG ELECTRONICS CO LTD177 citations96
US6026039AFeb 15, 2000
Parallel test circuit for semiconductor memory
SAMSUNG ELECTRONICS CO LTD44 citations93
US5852572ADec 22, 1998
Small-sized static random access memory cell
SAMSUNG ELECTRONICS CO LTD26 citations93
US7652926B2Jan 26, 2010
Nonvolatile semiconductor memory device including a cell string with dummy cells
SAMSUNG ELECTRONICS CO LTD32 citations92
US7582941B2Sep 1, 2009
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US7427531B2Sep 23, 2008
Phase change memory devices employing cell diodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US5965939AOct 12, 1999
Semiconductor device and a method of manufacture
SAMSUNG ELECTRONICS CO LTD19 citations92
US5488007AJan 30, 1996
Method of manufacture of a semiconductor device
SAMSUNG ELECTRONICS CO LTD43 citations92
US5414302AMay 9, 1995
Semiconductor device with a multilayered contact structure having a boro-phosphate silicate glass planarizing layer
SAMSUNG ELECTRONICS CO LTD29 citations92
US4948990AAug 14, 1990
BiCMOS inverter circuit
SAMSUNG ELECTRONICS CO LTD23 citations92
US5902126AMay 11, 1999
Methods for forming integrated circuit capacitor electrodes including surrounding insulating sidewalls and spacers
SAMSUNG ELECTRONICS CO LTD28 citations90
US7573411B2Aug 11, 2009
Digital-to-analog converter, display panel driver having the same, and digital-to-analog converting method
SAMSUNG ELECTRONICS CO LTD10 citations84
US6490223B1Dec 3, 2002
Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US5879984AMar 9, 1999
Methods for fabricating capacitor structures using a photoresist layer
SAMSUNG ELECTRONICS CO LTD10 citations74
US5732028AMar 24, 1998
Reference voltage generator made of BiMOS transistors
SAMSUNG ELECTRONICS CO LTD16 citations74
US5930621AJul 27, 1999
Methods for forming vertical electrode structures and related structures
SAMSUNG ELECTRONICS CO LTD16 citations71
US5960293ASep 28, 1999
Methods including oxide masks for fabricating capacitor structures for integrated circuit devices
SAMSUNG ELECTRONICS CO LTD15 citations70
US5208470AMay 4, 1993
Semiconductor memory device with a stacked capacitor
SAMSUNG ELECTRONICS CO LTD14 citations70
US5523255AJun 4, 1996
Method for forming a device isolation film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD10 citations68
US7994493B2Aug 9, 2011
Phase change memory devices employing cell diodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US8043869B2Oct 25, 2011
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7973483B2Jul 5, 2011
Light emitting pixel and apparatus for driving the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US5858860AJan 12, 1999
Methods of fabricating field isolated semiconductor devices including step reducing regions
SAMSUNG ELECTRONICS CO LTD4 citations60
US5019881AMay 28, 1991
Nonvolatile semiconductor memory component
SAMSUNG ELECTRONICS CO LTD4 citations54
US7952918B2May 31, 2011
Method of operating a magnetoresistive RAM
SAMSUNG ELECTRONICS CO LTD0 citations52
US7851878B2Dec 14, 2010
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7791929B2Sep 7, 2010
Magnetoresistive RAM and associated methods
SAMSUNG ELECTRONICS CO LTD0 citations52
US7605473B2Oct 20, 2009
Nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US6816429B2Nov 9, 2004
Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations52