Inventor

PARK BYUNG G

KR2 patents

⚠️ This page may combine multiple inventors who share the name “PARK BYUNG G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AT & T BELL LAB

1 patent

US5281552AJan 25, 1994

MOS fabrication process, including deposition of a boron-doped diffusion source layer

AT & T BELL LAB55 citations91

RHEE IN H

1 patent

US8545704B2Oct 1, 2013

Method for recovering amine from amine-containing waste water

RHEE IN H0 citations24