Inventor
LEE SHUN-YI
TW19 patents
⚠️ This page may combine multiple inventors who share the name “LEE SHUN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11270952B2Mar 8, 2022
Seal ring structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10157856B2Dec 18, 2018
Seal ring structure and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US9893070B2Feb 13, 2018
Semiconductor device and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11864376B2Jan 2, 2024
Semiconductor device including insulating element and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11088145B2Aug 10, 2021
Semiconductor device including insulating element
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11764256B2Sep 19, 2023
Semiconductor structure including MIM capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12575086B2Mar 10, 2026
Semiconductor device including insulating element and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12489065B2Dec 2, 2025
Fabrication method of semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10825894B2Nov 3, 2020
MIM capacitor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461085B2Oct 29, 2019
Semiconductor device including insulating element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10147719B2Dec 4, 2018
Semiconductor field effect transistors and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9601373B2Mar 21, 2017
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9356016B2May 31, 2016
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10037990B2Jul 31, 2018
Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG
3 patentsUS6147361ANov 14, 2000
Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity
TAIWAN SEMICONDUCTOR MFG30 citations92
US5627101AMay 6, 1997
Method of fabricating polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures
TAIWAN SEMICONDUCTOR MFG25 citations92
US5846848ADec 8, 1998
Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity
TAIWAN SEMICONDUCTOR MFG8 citations73