P

Inventor

WEITZEL CHARLES E

US44 patents
⚠️ This page may combine multiple inventors who share the name “WEITZEL CHARLES E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOROLA INC

34 patents
US5885860AMar 23, 1999

Silicon carbide transistor and method

MOTOROLA INC100 citations98
US6100549AAug 8, 2000

High breakdown voltage resurf HFET

MOTOROLA INC56 citations96
US5956578ASep 21, 1999

Method of fabricating vertical FET with Schottky diode

MOTOROLA INC82 citations96
US5917203AJun 29, 1999

Lateral gate vertical drift region transistor

MOTOROLA INC77 citations96
US5661312AAug 26, 1997

Silicon carbide MOSFET

MOTOROLA INC55 citations96
US5569937AOct 29, 1996

High breakdown voltage silicon carbide transistor

MOTOROLA INC56 citations96
US5710455AJan 20, 1998

Lateral MOSFET with modified field plates and damage areas

MOTOROLA INC79 citations94
US5895260AApr 20, 1999

Method of fabricating semiconductor devices and the devices

MOTOROLA INC29 citations92
US5877047AMar 2, 1999

Lateral gate, vertical drift region transistor

MOTOROLA INC20 citations92
US5612232AMar 18, 1997

Method of fabricating semiconductor devices and the devices

MOTOROLA INC36 citations92
US5399515AMar 21, 1995

Method of fabricating a silicon carbide vertical MOSFET and device

MOTOROLA INC38 citations92
US5451797ASep 19, 1995

Method of fabricating a silicon carbide vertical MOSFET and device

MOTOROLA INC24 citations91
US5397717AMar 14, 1995

Method of fabricating a silicon carbide vertical MOSFET

MOTOROLA INC27 citations91
US5677230AOct 14, 1997

Method of making wide bandgap semiconductor devices

MOTOROLA INC19 citations89
US5399887AMar 21, 1995

Modulation doped field effect transistor

MOTOROLA INC40 citations89
US4969032ANov 6, 1990

Monolithic microwave integrated circuit having vertically stacked components

MOTOROLA INC34 citations87
US5780878AJul 14, 1998

Lateral gate, vertical drift region transistor

MOTOROLA INC17 citations84
US5119149AJun 2, 1992

Gate-drain shield reduces gate to drain capacitance

MOTOROLA INC20 citations82
US6146926ANov 14, 2000

Lateral gate, vertical drift region transistor

MOTOROLA INC9 citations74
US6127272AOct 3, 2000

Method of electron beam lithography on very high resistivity substrates

MOTOROLA INC11 citations74
US5917204AJun 29, 1999

Insulated gate bipolar transistor with reduced electric fields

MOTOROLA INC14 citations74
US5641695AJun 24, 1997

Method of forming a silicon carbide JFET

MOTOROLA INC10 citations74
US5635732AJun 3, 1997

Silicon carbide LOCOS vertical MOSFET device

MOTOROLA INC9 citations74
US5627385AMay 6, 1997

Lateral silicon carbide transistor

MOTOROLA INC9 citations74
US5933750AAug 3, 1999

Method of fabricating a semiconductor device with a thinned substrate

MOTOROLA INC14 citations73
US4998158AMar 5, 1991

Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier

MOTOROLA INC9 citations71
US4870478ASep 26, 1989

Dual-gate gallium arsenide power metal semiconductor field effect transistor

MOTOROLA INC10 citations71
US6002148ADec 14, 1999

Silicon carbide transistor and method

MOTOROLA INC3 citations63
US6255710B1Jul 3, 2001

3-D smart power IC

MOTOROLA INC6 citations62
US6180495B1Jan 30, 2001

Silicon carbide transistor and method therefor

MOTOROLA INC3 citations62
US5693969ADec 2, 1997

MESFET having a termination layer in the channel layer

MOTOROLA INC6 citations62
US5399893AMar 21, 1995

Diode protected semiconductor device

MOTOROLA INC6 citations60
US5796122AAug 18, 1998

Method for planarizing wide bandgap semiconductor devices

MOTOROLA INC1 citations49
US5852316ADec 22, 1998

Complementary heterojunction amplifier

MOTOROLA INC0 citations42

FREESCALE SEMICONDUCTOR INC

5 patents

RCA CORP

5 patents