Inventor
WEITZEL CHARLES E
US44 patents
⚠️ This page may combine multiple inventors who share the name “WEITZEL CHARLES E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
34 patentsUS5885860AMar 23, 1999
Silicon carbide transistor and method
MOTOROLA INC100 citations98
US6100549AAug 8, 2000
High breakdown voltage resurf HFET
MOTOROLA INC56 citations96
US5956578ASep 21, 1999
Method of fabricating vertical FET with Schottky diode
MOTOROLA INC82 citations96
US5917203AJun 29, 1999
Lateral gate vertical drift region transistor
MOTOROLA INC77 citations96
US5661312AAug 26, 1997
Silicon carbide MOSFET
MOTOROLA INC55 citations96
US5569937AOct 29, 1996
High breakdown voltage silicon carbide transistor
MOTOROLA INC56 citations96
US5710455AJan 20, 1998
Lateral MOSFET with modified field plates and damage areas
MOTOROLA INC79 citations94
US5895260AApr 20, 1999
Method of fabricating semiconductor devices and the devices
MOTOROLA INC29 citations92
US5877047AMar 2, 1999
Lateral gate, vertical drift region transistor
MOTOROLA INC20 citations92
US5612232AMar 18, 1997
Method of fabricating semiconductor devices and the devices
MOTOROLA INC36 citations92
US5399515AMar 21, 1995
Method of fabricating a silicon carbide vertical MOSFET and device
MOTOROLA INC38 citations92
US5451797ASep 19, 1995
Method of fabricating a silicon carbide vertical MOSFET and device
MOTOROLA INC24 citations91
US5397717AMar 14, 1995
Method of fabricating a silicon carbide vertical MOSFET
MOTOROLA INC27 citations91
US5677230AOct 14, 1997
Method of making wide bandgap semiconductor devices
MOTOROLA INC19 citations89
US5399887AMar 21, 1995
Modulation doped field effect transistor
MOTOROLA INC40 citations89
US4969032ANov 6, 1990
Monolithic microwave integrated circuit having vertically stacked components
MOTOROLA INC34 citations87
US5780878AJul 14, 1998
Lateral gate, vertical drift region transistor
MOTOROLA INC17 citations84
US5119149AJun 2, 1992
Gate-drain shield reduces gate to drain capacitance
MOTOROLA INC20 citations82
US6146926ANov 14, 2000
Lateral gate, vertical drift region transistor
MOTOROLA INC9 citations74
US6127272AOct 3, 2000
Method of electron beam lithography on very high resistivity substrates
MOTOROLA INC11 citations74
US5917204AJun 29, 1999
Insulated gate bipolar transistor with reduced electric fields
MOTOROLA INC14 citations74
US5641695AJun 24, 1997
Method of forming a silicon carbide JFET
MOTOROLA INC10 citations74
US5635732AJun 3, 1997
Silicon carbide LOCOS vertical MOSFET device
MOTOROLA INC9 citations74
US5627385AMay 6, 1997
Lateral silicon carbide transistor
MOTOROLA INC9 citations74
US5933750AAug 3, 1999
Method of fabricating a semiconductor device with a thinned substrate
MOTOROLA INC14 citations73
US4998158AMar 5, 1991
Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier
MOTOROLA INC9 citations71
US4870478ASep 26, 1989
Dual-gate gallium arsenide power metal semiconductor field effect transistor
MOTOROLA INC10 citations71
US6002148ADec 14, 1999
Silicon carbide transistor and method
MOTOROLA INC3 citations63
US6255710B1Jul 3, 2001
3-D smart power IC
MOTOROLA INC6 citations62
US6180495B1Jan 30, 2001
Silicon carbide transistor and method therefor
MOTOROLA INC3 citations62
US5693969ADec 2, 1997
MESFET having a termination layer in the channel layer
MOTOROLA INC6 citations62
US5399893AMar 21, 1995
Diode protected semiconductor device
MOTOROLA INC6 citations60
US5796122AAug 18, 1998
Method for planarizing wide bandgap semiconductor devices
MOTOROLA INC1 citations49
US5852316ADec 22, 1998
Complementary heterojunction amplifier
MOTOROLA INC0 citations42
FREESCALE SEMICONDUCTOR INC
5 patentsUS6893947B2May 17, 2005
Advanced RF enhancement-mode FETs with improved gate properties
FREESCALE SEMICONDUCTOR INC124 citations97
US6867078B1Mar 15, 2005
Method for forming a microwave field effect transistor with high operating voltage
FREESCALE SEMICONDUCTOR INC158 citations97
US7229903B2Jun 12, 2007
Recessed semiconductor device
FREESCALE SEMICONDUCTOR INC21 citations91
US6939781B2Sep 6, 2005
Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate
FREESCALE SEMICONDUCTOR INC17 citations82
US7253455B2Aug 7, 2007
pHEMT with barrier optimized for low temperature operation
FREESCALE SEMICONDUCTOR INC4 citations60
RCA CORP
5 patentsUS4199773AApr 22, 1980
Insulated gate field effect silicon-on-sapphire transistor and method of making same
RCA CORP71 citations96
US4333099AJun 1, 1982
Use of silicide to bridge unwanted polycrystalline silicon P-N junction
RCA CORP44 citations87
US4160260AJul 3, 1979
Planar semiconductor devices and method of making the same
RCA CORP20 citations80
US4131496ADec 26, 1978
Method of making silicon on sapphire field effect transistors with specifically aligned gates
RCA CORP27 citations76
US4263709AApr 28, 1981
Planar semiconductor devices and method of making the same
RCA CORP14 citations72