Inventor
COTE WILLIAM J
US32 patents
⚠️ This page may combine multiple inventors who share the name “COTE WILLIAM J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
24 patentsUS4910155AMar 20, 1990
Wafer flood polishing
IBM222 citations99
US8350583B2Jan 8, 2013
Probe-able voltage contrast test structures
IBM84 citations98
US7518190B2Apr 14, 2009
Grounding front-end-of-line structures on a SOI substrate
IBM94 citations98
US6375693B1Apr 23, 2002
Chemical-mechanical planarization of barriers or liners for copper metallurgy
IBM98 citations98
US6348076B1Feb 19, 2002
Slurry for mechanical polishing (CMP) of metals and use thereof
IBM147 citations98
US4838991AJun 13, 1989
Process for defining organic sidewall structures
IBM362 citations98
US6649531B2Nov 18, 2003
Process for forming a damascene structure
IBM87 citations97
US5308438AMay 3, 1994
Endpoint detection apparatus and method for chemical/mechanical polishing
IBM197 citations97
US4956313ASep 11, 1990
Via-filling and planarization technique
IBM207 citations97
US4786360ANov 22, 1988
Anisotropic etch process for tungsten metallurgy
IBM229 citations97
US6882015B2Apr 19, 2005
Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
IBM49 citations96
US6677637B2Jan 13, 2004
Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
IBM66 citations96
US5558563ASep 24, 1996
Method and apparatus for uniform polishing of a substrate
IBM97 citations96
US5234868AAug 10, 1993
Method for determining planarization endpoint during chemical-mechanical polishing
IBM92 citations96
US4919750AApr 24, 1990
Etching metal films with complexing chloride plasma
IBM132 citations96
US7030031B2Apr 18, 2006
Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material
IBM69 citations95
US7195971B2Mar 27, 2007
Method of manufacturing an intralevel decoupling capacitor
IBM26 citations93
US6093508AJul 25, 2000
Dual damascene structure formed in a single photoresist film
IBM35 citations93
US5906911AMay 25, 1999
Process of forming a dual damascene structure in a single photoresist film
IBM30 citations93
US7732866B2Jun 8, 2010
Grounding front-end-of-line structures on a SOI substrate
IBM9 citations84
US7480990B2Jan 27, 2009
Method of making conductor contacts having enhanced reliability
IBM17 citations83
US6743268B2Jun 1, 2004
Chemical-mechanical planarization of barriers or liners for copper metallurgy
IBM9 citations74
USRE38029EMar 11, 2003
Wafer polishing and endpoint detection
IBM7 citations74
US7323382B2Jan 29, 2008
Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
IBM0 citations52