Inventor

IPPOSHI TAKASHI

JP113 patents

⚠️ This page may combine multiple inventors who share the name “IPPOSHI TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IPPOSHI TAKASHI

MITSUBISHI ELECTRIC CORP

Stacked-type semiconductor device

Stacked type semiconductor device

Semiconductor device having a thin film transistor and manufacturing method thereof

Inductor with patterned ground shield

Inductor with patterned ground shield

Semiconductor device and method of manufacturing the same

Thin film transistor and a method of manufacturing thereof

Semiconductor device having a portion of gate electrode formed on an insulating substrate

Semiconductor device and method of manufacturing the same

SOI Semiconductor devices

Thin film transistor with particular nitrogen concentration

Stacked-type semiconductor device

Laser beam irradiating apparatus enabling uniform laser annealing

Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same

Field effect thin-film transistor for an SRAM with reduced standby current

Semiconductor device, method of manufacturing same and method of designing same

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device including high-frequency circuit with inductor

Method directed to the manufacture of an SOI device

MOS Transistor with a buried oxide film containing fluorine

Thin film transistor and a method of manufacturing thereof

Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor

Method for making a thin film transistor

Semiconductor device and manufacturing process thereof

Semiconductor device having active region in semiconductor layer on insulator layer and manufacturing method thereof

Semiconductor device having piezo resistance

Three-dimensional shape measuring device and three-dimensional shape measuring sensor

Method of manufacturing semiconductor device having planar single crystal semiconductor surface

Semiconductor substrate and method of fabricating semiconductor device

Method of producing SOI structures

Semiconductor device and method of manufacturing the same

Semiconductor device with field shield electrode

Semiconductor device and method of manufacturing the same

Semiconductor device, method of manufacturing same and method of designing same

RENESAS TECH CORP

Semiconductor wafer

Semiconductor device with effective heat-radiation

Semiconductor device

Semiconductor storage device having high soft-error immunity

Semiconductor device having a trench isolation and method of fabricating the same

Transistor having a graded active layer and an SOI based capacitor

Semiconductor device and method of manufacturing the same

Semiconductor storage device having high soft-error immunity

Semiconductor device, method of manufacturing semiconductor device and communication method

Semiconductor device and method of manufacturing the same

Semiconductor device including a contact connected to the body and method of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device, method of manufacturing same and method of designing same

MAEGAWA SHIGETO

Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuit