Inventor

IWAMATSU TOSHIAKI

JP179 patents

⚠️ This page may combine multiple inventors who share the name “IWAMATSU TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IWAMATSU TOSHIAKI

MITSUBISHI ELECTRIC CORP

Semiconductor device with storage node

Semiconductor device having metal silicide film

Vertical mosfet including a back gate electrode

Semiconductor device with columns

Stacked-type semiconductor device

Semiconductor device having a thin film transistor and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device, method of manufacturing the same and method of arranging dummy region

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having a trench isolation structure and an alignment mark area

Semiconductor device and method of manufacturing the same

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method for manufacturing a vertical mosfet including a back gate electrode

SOI Semiconductor devices

Method of manufacturing semiconductor substrate having total and partial dielectric isolation

Stacked-type semiconductor device

Semiconductor device having an SOI structure and a manufacturing method thereof

Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same

Field effect thin-film transistor for an SRAM with reduced standby current

Semiconductor device, method of manufacturing same and method of designing same

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device having metal silicide film and manufacturing method thereof

Semiconductor device

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device including high-frequency circuit with inductor

Semiconductor device having metal silicide film and manufacturing method thereof

Control methods of semiconductor manufacturing process, semiconductor manufacturing equipment, and semiconductor manufacturing environment

Input/output protection circuit having an SOI structure

Semiconductor device having metal silicide film

Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof

Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor

Semiconductor device

Semiconductor device and manufacturing process thereof

Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof

Semiconductor device having an SOI structure

Three-dimensional shape measuring device and three-dimensional shape measuring sensor

RENESAS TECH CORP

Semiconductor wafer and manufacturing method thereof

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device having a trench isolation and method of fabricating the same

Transistor having a graded active layer and an SOI based capacitor

Semiconductor device and method of manufacturing the same

Semiconductor wafer and semiconductor device comprising gettering layer

(unassigned)

Semiconductor device on an SOI substrate

RENESAS ELECTRONICS CORP

Method of manufacturing a misfet on an SOI substrate