Inventor
MIURA SHOJI
JP33 patents
⚠️ This page may combine multiple inventors who share the name “MIURA SHOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
18 patentsUS6291315B1Sep 18, 2001
Method for etching trench in manufacturing semiconductor devices
DENSO CORP72 citations96
US6946711B2Sep 20, 2005
Semiconductor device
DENSO CORP18 citations92
US6927167B2Aug 9, 2005
Method for manufacturing semiconductor device having controlled surface roughness
DENSO CORP21 citations92
US6917103B2Jul 12, 2005
Molded semiconductor power device having heat sinks exposed on one surface
DENSO CORP33 citations92
US6274452B1Aug 14, 2001
Semiconductor device having multilayer interconnection structure and method for manufacturing the same
DENSO CORP52 citations92
US6242792B1Jun 5, 2001
Semiconductor device having oblique portion as reflection
DENSO CORP31 citations92
US6104078AAug 15, 2000
Design for a semiconductor device having elements isolated by insulating regions
DENSO CORP29 citations92
US6809348B1Oct 26, 2004
Semiconductor device and method for manufacturing the same
DENSO CORP19 citations91
US6829152B2Dec 7, 2004
Load drive circuit using flywheel diode
DENSO CORP27 citations90
US7247929B2Jul 24, 2007
Molded semiconductor device with heat conducting members
DENSO CORP16 citations84
US7009292B2Mar 7, 2006
Package type semiconductor device
DENSO CORP16 citations83
US7030496B2Apr 18, 2006
Semiconductor device having aluminum and metal electrodes and method for manufacturing the same
DENSO CORP13 citations80
US7109558B2Sep 19, 2006
Power MOS transistor having capability for setting substrate potential independently of source potential
DENSO CORP6 citations63
US7193326B2Mar 20, 2007
Mold type semiconductor device
DENSO CORP3 citations62
US6972459B2Dec 6, 2005
Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate
DENSO CORP2 citations62
US7361996B2Apr 22, 2008
Semiconductor device having tin-based solder layer and method for manufacturing the same
DENSO CORP2 citations61
US7579212B2Aug 25, 2009
Semiconductor device having tin-based solder layer and method for manufacturing the same
DENSO CORP0 citations51
US7468318B2Dec 23, 2008
Method for manufacturing mold type semiconductor device
DENSO CORP0 citations51
NIPPON DENSO CO
11 patentsUS5480832AJan 2, 1996
Method for fabrication of semiconductor device
NIPPON DENSO CO57 citations95
US5423941AJun 13, 1995
Dry etching process for semiconductor
NIPPON DENSO CO86 citations94
US5644157AJul 1, 1997
High withstand voltage type semiconductor device having an isolation region
NIPPON DENSO CO25 citations92
US5599722AFeb 4, 1997
SOI semiconductor device and method of producing same wherein warpage is reduced in the semiconductor device
NIPPON DENSO CO45 citations92
US5592015AJan 7, 1997
Dielectric isolated type semiconductor device provided with bipolar element
NIPPON DENSO CO23 citations92
US5557134ASep 17, 1996
Dielectric isolated type semiconductor device
NIPPON DENSO CO25 citations92
US5449946ASep 12, 1995
Semiconductor device provided with isolation region
NIPPON DENSO CO28 citations92
US5525831AJun 11, 1996
Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process
NIPPON DENSO CO33 citations91
US5522966AJun 4, 1996
Dry etching process for semiconductor
NIPPON DENSO CO38 citations90
US5284794AFeb 8, 1994
Method of making semiconductor device using a trimmable thin-film resistor
NIPPON DENSO CO21 citations90
US6287933B1Sep 11, 2001
Semiconductor device having thin film resistor and method of producing same
NIPPON DENSO CO10 citations69