Inventor

HACHIGO AKIHIRO

JP48 patents

⚠️ This page may combine multiple inventors who share the name “HACHIGO AKIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HACHIGO AKIHIRO

SUMITOMO ELECTRIC INDUSTRIES

Surface acoustic wave element

Diamond-LiTaO3 surface acoustic wave device

Surface acoustic wave device

Orientational material, orientational substrate and surface acoustic wave device

Method of manufacturing a surface acoustic wave element

Surface acoustic wave device and method of manufacturing the same

Method for manufacturing a surface acoustic wave device

Method for producing a surface acoustic wave device

Method of making a surface acoustic wave device

Surface acoustic wave element and method of manufacturing the same

Surface acoustic wave device and method for producing the same

Method of manufacturing a surface acoustic wave device

Surface acoustic wave device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

Surface acoustic wave device utilizing a ZnO layer and a diamond layer

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Surface acoustic wave device and diamond base material for the same

Polycrystalline diamond substrate and process for producing the same

Surface acoustic wave device

Surface acoustic wave device

Surface-acoustic-wave device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

III-V compound semiconductor substrate manufacturing method

Gallium nitride substrate, and gallium-nitride-substrate testing and manufacturing methods

Surface acoustic wave device and diamond base material for the same

Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack

Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device

Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Surface acoustic wave device and diamond base material for the same

Composite substrate

Method of manufacturing composite substrate

HACHIGO AKIHIRO

Method of manufacturing group III nitride semiconductor layer bonded substrate

Gallium nitride substrate

Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane

Production method of compound semiconductor member

SEIKO EPSON CORP

Surface acoustic wave device and substrate thereof

Saw device

Surface acoustic wave element

ISHIBASHI KEIJI

GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

KASAI HITOSHI

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

KYONO TAKASHI

Semiconductor device and method for manufacturing the same