Inventor
CHAN WEN-HSIN
TW14 patents
Patents
14 patentsUS10147805B2Dec 4, 2018
Structure and formation method of semiconductor device structure with a dummy fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10867852B2Dec 15, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10505023B2Dec 10, 2019
Structure and formation method of semiconductor device structure with a dummy fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10008568B2Jun 26, 2018
Structure and formation method of semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US11018234B2May 25, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9589915B2Mar 7, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12283595B2Apr 22, 2025
Integration of multiple transistors having fin and mesa structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11081571B2Aug 3, 2021
Structure and formation method of semiconductor device structure with a dummy fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507461B2Dec 23, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11848367B2Dec 19, 2023
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9136340B2Sep 15, 2015
Doped protection layer for contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations58
US10727321B2Jul 28, 2020
Structure and formation method of semiconductor device structure with a dummy fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9991123B2Jun 5, 2018
Doped protection layer for contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US9647087B2May 9, 2017
Doped protection layer for contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48