Inventor
Hsiao Po-Kai
TW6 patents
Patents
6 patentsUS9893185B2Feb 13, 2018
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12094757B2Sep 17, 2024
Method for manufacturing semiconductor device with semiconductor capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11688625B2Jun 27, 2023
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11670551B2Jun 6, 2023
Interface trap charge density reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11996317B2May 28, 2024
Methods for forming isolation regions by depositing and oxidizing a silicon liner
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12400910B2Aug 26, 2025
Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47