Inventor
ONOMURA MASAAKI
JP45 patents
⚠️ This page may combine multiple inventors who share the name “ONOMURA MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
43 patentsUS6031858AFeb 29, 2000
Semiconductor laser and method of fabricating same
TOSHIBA KK127 citations99
US6015979AJan 18, 2000
Nitride-based semiconductor element and method for manufacturing the same
TOSHIBA KK338 citations99
US6067309AMay 23, 2000
Compound semiconductor light-emitting device of gallium nitride series
TOSHIBA KK138 citations98
US6060335AMay 9, 2000
Semiconductor light emitting device and method of manufacturing the same
TOSHIBA KK102 citations98
US5821555AOct 13, 1998
Semicoductor device having a hetero interface with a lowered barrier
TOSHIBA KK283 citations98
US5696389ADec 9, 1997
Light-emitting semiconductor device
TOSHIBA KK623 citations98
US6185238B1Feb 6, 2001
Nitride compound semiconductor laser and its manufacturing method
TOSHIBA KK80 citations96
US6121634ASep 19, 2000
Nitride semiconductor light emitting device and its manufacturing method
TOSHIBA KK72 citations96
US5780873AJul 14, 1998
Semiconductor device capable of easily forming cavity and its manufacturing method
TOSHIBA KK68 citations96
US6252894B1Jun 26, 2001
Semiconductor laser using gallium nitride series compound semiconductor
TOSHIBA KK132 citations95
US5488233AJan 30, 1996
Semiconductor light-emitting device with compound semiconductor layer
TOSHIBA KK66 citations95
US6873634B2Mar 29, 2005
Semiconductor laser diode
TOSHIBA KK43 citations93
US6400742B1Jun 4, 2002
Semiconductor laser and method of fabricating same
TOSHIBA KK41 citations93
US5972730AOct 26, 1999
Nitride based compound semiconductor light emitting device and method for producing the same
TOSHIBA KK41 citations93
US5274649ADec 28, 1993
Wavelength-tunable distributed-feedback semiconductor laser device
TOSHIBA KK34 citations93
US5253264AOct 12, 1993
Optical semiconductor device
TOSHIBA KK47 citations93
US5585649ADec 17, 1996
Compound semiconductor devices and methods of making compound semiconductor devices
TOSHIBA KK44 citations92
US5347526ASep 13, 1994
Wavelength-tunable semiconductor laser
TOSHIBA KK36 citations92
US7498618B2Mar 3, 2009
Nitride semiconductor device
TOSHIBA KK13 citations84
US7358156B2Apr 15, 2008
Compound semiconductor device and method of manufacturing the same
TOSHIBA KK9 citations83
US7737467B2Jun 15, 2010
Nitride semiconductor device with a hole extraction electrode
TOSHIBA KK7 citations74
US6005263ADec 21, 1999
Light emitter with lowered heterojunction interface barrier
TOSHIBA KK8 citations73
US11508647B2Nov 22, 2022
Semiconductor device
TOSHIBA KK2 citations72
US11264899B2Mar 1, 2022
Semiconductor device
TOSHIBA KK4 citations72
US10771057B1Sep 8, 2020
Semiconductor device
TOSHIBA KK3 citations72
US12328924B2Jun 10, 2025
Semiconductor device
TOSHIBA KK1 citations64
US7862657B2Jan 4, 2011
Crystal growth method and apparatus
TOSHIBA KK5 citations63
US7333523B2Feb 19, 2008
Semiconductor laser device
TOSHIBA KK3 citations63
US12588573B2Mar 24, 2026
Semiconductor device
TOSHIBA KK0 citations62
US10998433B2May 4, 2021
Semiconductor device
TOSHIBA KK1 citations62
US7602829B2Oct 13, 2009
Semiconductor light emitting device and method of manufacturing same
TOSHIBA KK2 citations62
US7339255B2Mar 4, 2008
Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
TOSHIBA KK3 citations62
US12444668B2Oct 14, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12273101B2Apr 8, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12046668B2Jul 23, 2024
Semiconductor device
TOSHIBA KK0 citations52
US11251298B2Feb 15, 2022
Power semiconductor device
TOSHIBA KK0 citations52
US10910489B2Feb 2, 2021
Semiconductor device
TOSHIBA KK0 citations52
US8796111B2Aug 5, 2014
Stacked layers of nitride semiconductor and method for manufacturing the same
TOSHIBA KK0 citations52
US7554127B2Jun 30, 2009
Semiconductor light-emitting element and method of manufacturing the same
TOSHIBA KK1 citations52
US7531397B2May 12, 2009
Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes
TOSHIBA KK0 citations52
US7369592B2May 6, 2008
Semiconductor laser device
TOSHIBA KK1 citations52
US12062651B2Aug 13, 2024
Semiconductor device
TOSHIBA KK0 citations51
US11290100B2Mar 29, 2022
Semiconductor device
TOSHIBA KK0 citations51