Inventor
YANG HYUN-WOO
KR3 patents
Patents
3 patentsUS10199566B2Feb 5, 2019
Semiconductor device having magnetic tunnel junction structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations81
US9698198B2Jul 4, 2017
Memory device including a protection insulating pattern
SAMSUNG ELECTRONICS CO LTD1 citations50
US10236442B2Mar 19, 2019
Methods of forming an interconnection line and methods of fabricating a magnetic memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations40