Inventor
OMURA ICHIRO
JP94 patents
Patents
50 patentsUS7304331B2Dec 4, 2007
Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control
TOSHIBA KK151 citations99
US7038252B2May 2, 2006
Semiconductor device using a nitride semiconductor
TOSHIBA KK145 citations99
US6844592B2Jan 18, 2005
Semiconductor device with super junction region
TOSHIBA KK144 citations99
US6750508B2Jun 15, 2004
Power semiconductor switching element provided with buried electrode
TOSHIBA KK190 citations99
US6037632AMar 14, 2000
Semiconductor device
TOSHIBA KK293 citations99
US7271477B2Sep 18, 2007
Power semiconductor device package
TOSHIBA KK72 citations98
US7250641B2Jul 31, 2007
Nitride semiconductor device
TOSHIBA KK61 citations98
US6933544B2Aug 23, 2005
Power semiconductor device
TOSHIBA KK72 citations98
US6693338B2Feb 17, 2004
Power semiconductor device having RESURF layer
TOSHIBA KK119 citations98
US5554862ASep 10, 1996
Power semiconductor device
TOSHIBA KK135 citations98
US5329142AJul 12, 1994
Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure
TOSHIBA KK128 citations98
US6919610B2Jul 19, 2005
Power semiconductor device having RESURF layer
TOSHIBA KK82 citations97
US6888195B2May 3, 2005
Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles
TOSHIBA KK97 citations97
US6153896ANov 28, 2000
Semiconductor device and control method thereof
TOSHIBA KK97 citations97
US7161209B2Jan 9, 2007
Power semiconductor device
TOSHIBA KK56 citations96
US7075125B2Jul 11, 2006
Power semiconductor device
TOSHIBA KK58 citations96
US6940090B2Sep 6, 2005
Wideband gap having a low on-resistance and having a high avalanche capability
TOSHIBA KK43 citations96
US6809349B2Oct 26, 2004
Power semiconductor device
TOSHIBA KK43 citations96
US6049109AApr 11, 2000
Silicon on Insulator semiconductor device with increased withstand voltage
TOSHIBA KK64 citations96
US5969400AOct 19, 1999
High withstand voltage semiconductor device
TOSHIBA KK76 citations96
US5838026ANov 17, 1998
Insulated-gate semiconductor device
TOSHIBA KK58 citations96
US5689121ANov 18, 1997
Insulated-gate semiconductor device
TOSHIBA KK61 citations96
US5585651ADec 17, 1996
Insulated-gate semiconductor device having high breakdown voltages
TOSHIBA KK56 citations96
US5548150AAug 20, 1996
Field effect transistor
TOSHIBA KK91 citations96
US5464994ANov 7, 1995
Insulated-gate thyristor
TOSHIBA KK45 citations96
US5448083ASep 5, 1995
Insulated-gate semiconductor device
TOSHIBA KK75 citations96
US5381026AJan 10, 1995
Insulated-gate thyristor
TOSHIBA KK46 citations96
US7554155B2Jun 30, 2009
Power semiconductor device and method of manufacturing the same
TOSHIBA KK26 citations93
US7508015B2Mar 24, 2009
Semiconductor device using a nitride semiconductor
TOSHIBA KK29 citations93
US7319257B2Jan 15, 2008
Power semiconductor device
TOSHIBA KK22 citations93
US7317225B2Jan 8, 2008
Power semiconductor device
TOSHIBA KK18 citations93
US7271429B2Sep 18, 2007
Nitride semiconductor device
TOSHIBA KK27 citations93
US7238576B2Jul 3, 2007
Semiconductor device and method of manufacturing the same
TOSHIBA KK30 citations93
US7170106B2Jan 30, 2007
Power semiconductor device
TOSHIBA KK15 citations93
US7115475B2Oct 3, 2006
Method of manufacturing semiconductor device
TOSHIBA KK37 citations93
US7078740B2Jul 18, 2006
Power semiconductor device
TOSHIBA KK24 citations93
US6967374B1Nov 22, 2005
Power semiconductor device
TOSHIBA KK40 citations93
US6930352B2Aug 16, 2005
Insulated gate semiconductor device
TOSHIBA KK37 citations93
US6849880B1Feb 1, 2005
Power semiconductor device
TOSHIBA KK46 citations93
US6465844B2Oct 15, 2002
Power semiconductor device and method of manufacturing the same
TOSHIBA KK25 citations93
US6069371AMay 30, 2000
Semiconductor rectifier and a method for driving the same
TOSHIBA KK21 citations93
US5962893AOct 5, 1999
Schottky tunneling device
TOSHIBA KK54 citations93
US5714775AFeb 3, 1998
Power semiconductor device
TOSHIBA KK36 citations93
US5640040AJun 17, 1997
High breakdown voltage semiconductor device
TOSHIBA KK40 citations93
US5438220AAug 1, 1995
High breakdown voltage semiconductor device
TOSHIBA KK42 citations93
US6995426B2Feb 7, 2006
Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
TOSHIBA KK27 citations92
US6700156B2Mar 2, 2004
Insulated gate semiconductor device
TOSHIBA KK34 citations92
US6534998B1Mar 18, 2003
Semiconductor device and control method thereof
TOSHIBA KK16 citations92
US6236069B1May 22, 2001
Insulated-gate thyristor
TOSHIBA KK26 citations92
US5883402AMar 16, 1999
Semiconductor device and protection method
TOSHIBA KK21 citations92
Showing the top 50 of 94 patents by PatentIndex Score.