Inventor
NAKAGAWA AKIO
JP172 patents
⚠️ This page may combine multiple inventors who share the name “NAKAGAWA AKIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
44 patentsUS6064086AMay 16, 2000
Semiconductor device having lateral IGBT
TOSHIBA KK205 citations99
US5731603AMar 24, 1998
Lateral IGBT
TOSHIBA KK191 citations99
US5105243AApr 14, 1992
Conductivity-modulation metal oxide field effect transistor with single gate structure
TOSHIBA KK165 citations99
US6452231B1Sep 17, 2002
Semiconductor device
TOSHIBA KK94 citations98
US6297534B1Oct 2, 2001
Power semiconductor device
TOSHIBA KK122 citations98
US6211549B1Apr 3, 2001
High breakdown voltage semiconductor device including first and second semiconductor elements
TOSHIBA KK117 citations98
US5241210AAug 31, 1993
High breakdown voltage semiconductor device
TOSHIBA KK123 citations98
US5162876ANov 10, 1992
Semiconductor device having high breakdown voltage
TOSHIBA KK122 citations98
US4672407AJun 9, 1987
Conductivity modulated MOSFET
TOSHIBA KK83 citations97
US6614077B2Sep 2, 2003
Semiconductor device improved in ESD reliability
TOSHIBA KK65 citations96
US6614089B2Sep 2, 2003
Field effect transistor
TOSHIBA KK64 citations96
US6133607AOct 17, 2000
Semiconductor device
TOSHIBA KK70 citations96
US6049109AApr 11, 2000
Silicon on Insulator semiconductor device with increased withstand voltage
TOSHIBA KK64 citations96
US5932897AAug 3, 1999
High-breakdown-voltage semiconductor device
TOSHIBA KK84 citations96
US5838026ANov 17, 1998
Insulated-gate semiconductor device
TOSHIBA KK58 citations96
US5689121ANov 18, 1997
Insulated-gate semiconductor device
TOSHIBA KK61 citations96
US5585651ADec 17, 1996
Insulated-gate semiconductor device having high breakdown voltages
TOSHIBA KK56 citations96
US5548150AAug 20, 1996
Field effect transistor
TOSHIBA KK91 citations96
US5464994ANov 7, 1995
Insulated-gate thyristor
TOSHIBA KK45 citations96
US5448083ASep 5, 1995
Insulated-gate semiconductor device
TOSHIBA KK75 citations96
US5381026AJan 10, 1995
Insulated-gate thyristor
TOSHIBA KK46 citations96
US5378920AJan 3, 1995
High breakdown voltage semiconductor device
TOSHIBA KK48 citations96
US5272365ADec 21, 1993
Silicon transistor device with silicon-germanium electron gas hetero structure channel
TOSHIBA KK59 citations96
US5086332AFeb 4, 1992
Planar semiconductor device having high breakdown voltage
TOSHIBA KK60 citations96
US5072287ADec 10, 1991
Semiconductor device and method of manufacturing the same
TOSHIBA KK75 citations96
US5068700ANov 26, 1991
Lateral conductivity modulated mosfet
TOSHIBA KK80 citations96
US4928155AMay 22, 1990
Lateral conductivity modulated MOSFET
TOSHIBA KK54 citations96
US4878957ANov 7, 1989
Dielectrically isolated semiconductor substrate
TOSHIBA KK90 citations96
US4782372ANov 1, 1988
Lateral conductivity modulated MOSFET
TOSHIBA KK33 citations96
US4760431AJul 26, 1988
Gate turn-off thyristor with independent turn-on/off controlling transistors
TOSHIBA KK53 citations96
US4680604AJul 14, 1987
Conductivity modulated MOS transistor device
TOSHIBA KK58 citations96
US5985708ANov 16, 1999
Method of manufacturing vertical power device
TOSHIBA KK73 citations95
US4935386AJun 19, 1990
Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
TOSHIBA KK51 citations95
US7230297B2Jun 12, 2007
Trench-gated MOSFET including schottky diode therein
TOSHIBA KK28 citations93
US7138698B2Nov 21, 2006
Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
TOSHIBA KK16 citations93
US7061047B2Jun 13, 2006
Semiconductor device having trench gate structure and manufacturing method thereof
TOSHIBA KK26 citations93
US6879005B2Apr 12, 2005
High withstand voltage semiconductor device
TOSHIBA KK43 citations93
US6838730B1Jan 4, 2005
Semiconductor device
TOSHIBA KK36 citations93
US6683343B2Jan 27, 2004
High voltage semiconductor device having two buffer layer
TOSHIBA KK36 citations93
US6605844B2Aug 12, 2003
Semiconductor device
TOSHIBA KK31 citations93
US6563193B1May 13, 2003
Semiconductor device
TOSHIBA KK22 citations93
US6380566B1Apr 30, 2002
Semiconductor device having FET structure with high breakdown voltage
TOSHIBA KK44 citations93
US6118149ASep 12, 2000
Trench gate MOSFET
TOSHIBA KK55 citations93
US5994739ANov 30, 1999
Integrated circuit device
TOSHIBA KK32 citations93
KOBE STEEL LTD
4 patentsUS5133773AJul 28, 1992
Teaching playback swing-phase-controlled above-knee prosthesis
KOBE STEEL LTD90 citations95
US5133774AJul 28, 1992
Teaching playback swing-phase-controlled above-knee prosthesis
KOBE STEEL LTD92 citations95
US5062856ANov 5, 1991
Teaching playback swing-phase-controlled above-knee prosthesis
KOBE STEEL LTD119 citations95
US5443524AAug 22, 1995
Teaching playback swing-phase-controlled above knee prosthesis
KOBE STEEL LTD86 citations94
FUJITSU LTD
1 patent(unassigned)
1 patentShowing the top 50 of 172 patents by PatentIndex Score.