Inventor

USAMI TATSUYA

JP120 patents

⚠️ This page may combine multiple inventors who share the name “USAMI TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

USAMI TATSUYA

NEC CORP

Semiconductor device and method of manufacturing the same

Semiconductor device and process for producing the same

Method of manufacturing semiconductor device having multilayer wiring

Semiconductor device and fabrication process thereof

Plasma CVD process for forming a fluorine-doped SiO2 dielectric film

Manufacturing method of semicondcutor device

Semiconductor device and manufacturing method thereof for realizing high packaging density

Method of manufacturing semiconductor device

Semiconductor device with low permittivity interlayer insulating film and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Chamber etching of plasma processing apparatus

Chamber etching of plasma processing apparatus

Wiring structure and method for manufacturing the same

Fluorine doping concentrations in a multi-structure semiconductor device

Semiconductor device and process for production thereof

Semiconductor device having a polysilicon resistor element with increased stability and method of fabricating same

Process of fabricating semiconductor device having ashing step for photo-resist mask in plasma produced from Nx Hy gas

Semiconductor device and process for producing the same

Process for manufacturing a semiconductor device

Method for manufacturing semiconductor device

Fabrication process for a semiconductor device with damascene interconnect lines of the same level separated by insulators with different dielectric constants

Process for fabricating semiconductor device, apparatus using more than one kind of inert gas for evacuating air and method for entering wafer into the apparatus

Plasma CVD dielectric film and process for forming the same

Semiconductor device and fabrication process thereof

Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Method of manufacturing semiconductor device having multilayer wiring

Semiconductor device having an organic resin layer and silicon oxide layer containing fluorine for preventing crosstalk between metal lines and a method of manufacturing the same

NEC ELECTRONICS CORP

Semiconductor device and manufacturing method thereof

Semiconductor device, semiconductor wafer, and methods of producing same device and wafer

Semiconductor device and manufacturing method thereof

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device having two distinct sioch layers

Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof

Method of manufacturing a semiconductor device

Semiconductor device having an interconnect structure and a reinforcing insulating film

Semiconductor device and method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device

Manufacturing method of semiconductor device

Semiconductor device and method of manufacturing the same

Carbon containing silicon oxide film having high ashing tolerance and adhesion

Semiconductor device and method for manufacturing same

Method of producing a semiconductor device having a multi-layered insulation film

Semiconductor device with improved reliability and manufacturing method of the same

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP

Semiconductor device and its manufacturing method

Optical semiconductor device

USAMI TATSUYA

Semiconductor device and method of manufacturing semiconductor device