Inventor

CHANG KENT KUOHUA

US76 patents

⚠️ This page may combine multiple inventors who share the name “CHANG KENT KUOHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG KENT KUOHUA

MACRONIX INT CO LTD

Method for forming gate dielectric layer in NROM

Method of fabricating a nitride read-only-memory cell vertical structure

Method of reading two-bit memories of NROM cell

Method for fabricating a nitride read-only-memory (NROM)

Method for fabricating locally strained channel

Method for forming a nonvolatile memory with optimum bias condition

Method of fabricating multi-bit flash memory

Method of fabricating NROM memory cell

Method of manufacturing twin bit cell flash memory device

Method for fabricating an ONO layer of an NROM

Twin bit cell flash memory device

Structure of fabricating high gate performance for NROM technology

Silicon nitride read-only-memory

High-K tunneling dielectric for read only memory device and fabrication method thereof

Twin bit cell flash memory device

High-K tunneling dielectric for read only memory device and fabrication method thereof

SiN ROM and method of fabricating the same

Method for fabricating raised source/drain of semiconductor device

Method of fabricating a non-volatile memory device to eliminate charge loss

Method of manufacturing a flash memory

Method of manufacturing flash memory

Fabrication method for an interpoly dielectric layer

Nonvolatile memory cell for prevention of second bit effect

Method of manufacturing flash memory

Random access memory cell

Memory device with low resistance buried bit lines

Non-volatile memory and fabricating method thereof

Method of fabricating memory

Non-volatile memory and fabricating method thereof

ADVANCED MICRO DEVICES INC

LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices

RTCVD oxide and N2 O anneal for top oxide of ONO film

Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications

Method for providing a dopant level for polysilicon for flash memory devices

Method for forming flash memory devices

Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices

Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices

Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices

Method of forming select gate to improve reliability and performance for NAND type flash memory devices

Method of reducing program disturbs in NAND type flash memory devices

High yield performance semiconductor process flow for NAND flash memory products

Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices

Method and apparatus for improved performance of flash memory cell devices

Method for reduced gate aspect ratio to improve gap-fill after spacer etch

Method for manufacturing memory devices

Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates

Method and apparatus for preventing P1 punchthrough

Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices

Narrower erase distribution for flash memory by smaller poly grain size

In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates

Method of in-situ cleaning for LPCVD teos pump