Inventor · disambiguated record
Hongning Yang
Also filed as: YANG HONGNING
72 granted patents·2 pending applications·617 citations·filing 1998–2021
99Inventor score
Top patents by PatentIndex Score
74 records- 0196US8541862B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2011·Granted Sep 24, 2013·23 cites·16 claims
- 0296US6410462B1Method of making low-K carbon doped silicon oxideSHARP LAB OF AMERICA INC·Filed 2000·Granted Jun 25, 2002·102 cites·30 claims
- 0395US9941350B1Semiconductor device isolation via depleted coupling layerNXP USA INC·Filed 2017·Granted Apr 10, 2018·13 cites·16 claims
- 0495US9306060B1Semiconductor devices and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 5, 2016·19 cites·20 claims
- 0594US9761707B1Laterally diffused MOSFET with isolation regionFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
- 0694US9614074B1Partial, self-biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Apr 4, 2017·13 cites·17 claims
- 0794US9508845B1LDMOS device with high-potential-biased isolation ringFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 29, 2016·14 cites·20 claims
- 0894US8247869B2LDMOS transistors with a split gateYANG HONGNING·Filed 2010·Granted Aug 21, 2012·19 cites·16 claims
- 0994US7776700B2LDMOS device and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·35 cites·20 claims
- 1094US7608513B2Dual gate LDMOS device fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 27, 2009·30 cites·20 claims
- 1193US9831338B1Alternating source region arrangementNXP USA INC·Filed 2017·Granted Nov 28, 2017·8 cites·24 claims
- 1293US8772871B2Partially depleted dielectric resurf LDMOSYANG HONGNING·Filed 2010·Granted Jul 8, 2014·16 cites·20 claims
- 1393US8575692B2Near zero channel length field drift LDMOSYANG HONGNING·Filed 2011·Granted Nov 5, 2013·14 cites·19 claims
- 1492US9590097B2Semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 7, 2017·7 cites·20 claims
- 1592US9165918B1Composite semiconductor device with multiple threshold voltagesYANG HONGNING·Filed 2014·Granted Oct 20, 2015·17 cites·20 claims
- 1692US6440878B1Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layerSHARP LAB OF AMERICA INC·Filed 2000·Granted Aug 27, 2002·43 cites·11 claims
- 1790US9543454B1Diodes with multiple junctionsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 10, 2017·6 cites·15 claims
- 1888US9728600B2Partially biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Aug 8, 2017·5 cites·19 claims
- 1988US9680011B2Self-adjusted isolation bias in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 2088US9231083B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2012·Granted Jan 5, 2016·8 cites·14 claims
- 2187US9871135B2Semiconductor device and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jan 16, 2018·5 cites·9 claims
- 2286US7795674B2Dual gate LDMOS devicesFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 14, 2010·9 cites·20 claims
- 2385US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 2485US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 2585US6630396B2Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbonSHARP LAB OF AMERICA INC·Filed 2002·Granted Oct 7, 2003·23 cites·9 claims
- 2684US7910991B2Dual gate lateral diffused MOS transistorFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·9 cites·10 claims
- 2782US10297676B2Partially biased isolation in semiconductor deviceNXP USA INC·Filed 2016·Granted May 21, 2019·4 cites·19 claims
- 2882US9666671B2Semiconductor device with composite drift region and related fabrication methodZHANG ZHIHONG·Filed 2014·Granted May 30, 2017·5 cites·18 claims
- 2982US9490322B2Semiconductor device with enhanced 3D resurfYANG HONGNING·Filed 2013·Granted Nov 8, 2016·5 cites·20 claims
- 3082US8896102B2Die edge sealing structures and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Nov 25, 2014·4 cites·19 claims
- 3181US9601595B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2015·Granted Mar 21, 2017·3 cites·15 claims
- 3281US8652930B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2013·Granted Feb 18, 2014·4 cites·20 claims
- 3381US7393752B2Semiconductor devices and method of fabricationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 1, 2008·6 cites·13 claims
- 3478US10177252B2Semiconductor device isolation with RESURF layer arrangementNXP USA INC·Filed 2016·Granted Jan 8, 2019·2 cites·12 claims
- 3578US9105657B2Methods for producing near zero channel length field drift LDMOSYANG HONGNING·Filed 2013·Granted Aug 11, 2015·3 cites·20 claims
- 3678US9093567B2Diodes with multiple junctions and fabrication methods thereforLIN XIN·Filed 2013·Granted Jul 28, 2015·3 cites·14 claims
- 3778US7700417B2Methods for forming cascode current mirrorsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·6 cites·20 claims
- 3875US7910441B2Multi-gate semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 22, 2011·5 cites·8 claims
- 3974US8227861B2Multi-gate semiconductor devicesYANG HONGNING·Filed 2010·Granted Jul 24, 2012·4 cites·16 claims
- 4073US9543379B2Semiconductor device with peripheral breakdown protectionYANG HONGNING·Filed 2014·Granted Jan 10, 2017·3 cites·18 claims
- 4173US9331025B2Die edge sealing structures and related fabrication methodsZHANG ZHIHONG·Filed 2014·Granted May 3, 2016·2 cites·18 claims
- 4273US9117841B2Mergeable semiconductor device with improved reliabilityZHANG ZHIHONG·Filed 2013·Granted Aug 25, 2015·2 cites·20 claims
- 4373US7411270B2Composite capacitor and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 12, 2008·8 cites·10 claims
- 4472US9070576B2Semiconductor device and related fabrication methodsYANG HONGNING·Filed 2012·Granted Jun 30, 2015·3 cites·17 claims
- 4571US5900290AMethod of making low-k fluorinated amorphous carbon dielectricSHARP MICROELECT TECH INC·Filed 1998·Granted May 4, 1999·39 cites·20 claims
- 4670US9601614B2Composite semiconductor device with different channel widthsMIN WON GI·Filed 2015·Granted Mar 21, 2017·2 cites·20 claims
- 4768US9159803B2Semiconductor device with HCI protection regionMIN WON GI·Filed 2012·Granted Oct 13, 2015·3 cites·20 claims
- 4868US8847312B2LDMOS device and method for improved SOAYANG HONGNING·Filed 2012·Granted Sep 30, 2014·2 cites·20 claims
- 4967US7851834B2Cascode current mirror and methodFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Dec 14, 2010·2 cites·17 claims
- 5065US9825169B2Partial, self-biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 21, 2017·1 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →