Inventor
HONEYCUTT JEFFREY
US7 patents
Patents
7 patentsUS5644166AJul 1, 1997
Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts
MICRON TECHNOLOGY INC96 citations95
US6331482B1Dec 18, 2001
Method of VLSI contact, trench, and via filling using a germanium underlayer with metallization
MICRON TECHNOLOGY INC15 citations92
US6309967B1Oct 30, 2001
Method of forming a contact
MICRON TECHNOLOGY INC6 citations73
US6239029B1May 29, 2001
Sacrificial germanium layer for formation of a contact
MICRON TECHNOLOGY INC9 citations73
US6093968AJul 25, 2000
Germanium alloy contact to a silicon substrate
MICRON TECHNOLOGY INC7 citations73
US6597042B1Jul 22, 2003
Contact with germanium layer
MICRON TECHNOLOGY INC2 citations62
US6229213B1May 8, 2001
Germanium alloy electrical interconnect structure
MICRON TECHNOLOGY INC1 citations62