P

Inventor

SATO SHUNICHI

JP154 patents
⚠️ This page may combine multiple inventors who share the name “SATO SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RICOH KK

36 patents
US6803604B2Oct 12, 2004

Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device

RICOH KK129 citations99
US6765232B2Jul 20, 2004

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

RICOH KK155 citations99
US6674785B2Jan 6, 2004

Vertical-cavity, surface-emission type laser diode and fabrication process thereof

RICOH KK99 citations99
US6614821B1Sep 2, 2003

Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

RICOH KK129 citations99
US6542528B1Apr 1, 2003

Light-emitting semiconductor device producing red wavelength optical radiation

RICOH KK131 citations99
US6281518B1Aug 28, 2001

Layered III-V semiconductor structures and light emitting devices including the structures

RICOH KK163 citations99
US6233264B1May 15, 2001

Optical semiconductor device having an active layer containing N

RICOH KK105 citations99
US6207973B1Mar 27, 2001

Light emitting devices with layered III-V semiconductor structures

RICOH KK191 citations99
US6959025B2Oct 25, 2005

Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode

RICOH KK103 citations98
US6927412B2Aug 9, 2005

Semiconductor light emitter

RICOH KK78 citations98
US6563851B1May 13, 2003

Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band

RICOH KK107 citations98
US6300650B1Oct 9, 2001

Optical semiconductor device having a multilayer reflection structure

RICOH KK92 citations98
US6072196AJun 6, 2000

semiconductor light emitting devices

RICOH KK114 citations98
US6975663B2Dec 13, 2005

Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode

RICOH KK88 citations97
US7684458B2Mar 23, 2010

Surface-emission laser diode and fabrication process thereof

RICOH KK42 citations96
US6449299B1Sep 10, 2002

Optical semiconductor device having an active layer containing N

RICOH KK39 citations96
US6049556AApr 11, 2000

Vertical cavity surface emitting laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency

RICOH KK54 citations96
US6002700ADec 14, 1999

Optical semiconductor device having a multilayer reflection structure

RICOH KK81 citations96
US5939733AAug 17, 1999

Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As

RICOH KK87 citations96
US5923691AJul 13, 1999

Laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency

RICOH KK87 citations96
US7787511B2Aug 31, 2010

Array of surface-emitting laser diodes having reduced device resistance and capable of performing high output operation and method of fabricating the surface-emitting laser diode

RICOH KK21 citations93
US7720125B2May 18, 2010

Surface light emitting laser element, surface light emitting laser array provided with it, electro-photographic system and optical communication system

RICOH KK37 citations93
US7198972B2Apr 3, 2007

Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band

RICOH KK33 citations93
US7180100B2Feb 20, 2007

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

RICOH KK24 citations93
US7067846B2Jun 27, 2006

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

RICOH KK22 citations93
US6983004B2Jan 3, 2006

Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

RICOH KK13 citations93
US6884291B1Apr 26, 2005

Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band

RICOH KK21 citations93
US6697404B1Feb 24, 2004

Laser diode operable in 1.3μm or 1.5μm wavelength band with improved efficiency

RICOH KK22 citations93
US6657233B2Dec 2, 2003

Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device

RICOH KK33 citations93
US6617618B2Sep 9, 2003

Light emitting semiconductor device with GaInNAs active layer and GaAs spacer layers

RICOH KK31 citations93
US6452215B1Sep 17, 2002

Semiconductor light emitting devices

RICOH KK34 citations93
US6382800B2May 7, 2002

Light emitting semiconductor devices

RICOH KK35 citations93
US6348698B1Feb 19, 2002

Layered semiconductor structures and light emitting devices including the structure

RICOH KK25 citations93
US5904549AMay 18, 1999

Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs

RICOH KK34 citations93
US7746912B2Jun 29, 2010

Surface emitting laser element, surface emitting laser array, optical scanning apparatus, image forming apparatus, and optical communication system

RICOH KK39 citations92
US7693204B2Apr 6, 2010

Surface-emitting laser device and surface-emitting laser array including same

RICOH KK39 citations92

FUJITSU LTD

3 patents

SHARP KK

3 patents

SATO SHUNICHI

3 patents

RICOH CO LTD

2 patents

CASIO COMPUTER CO LTD

1 patent

OLYMPUS OPTICAL CO

1 patent

ISHII TOSHIHIRO

1 patent

Showing the top 50 of 154 patents by PatentIndex Score.