Inventor · disambiguated record
Yasuhide Yakushi
Also filed as: YAKUSHI YASUHIDE
6 granted patents·7 citations·filing 2009–2020
72Inventor score
Top patents by PatentIndex Score
6 records- 0180US8507364B2N-type group III nitride-based compound semiconductor and production method thereforNAGAI SEIJI·Filed 2009·Granted Aug 13, 2013·4 cites·11 claims
- 0272US11280024B2Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphereTOYODA GOSEI KK·Filed 2020·Granted Mar 22, 2022·0 cites·5 claims
- 0370US10329687B2Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux methodTOYODA GOSEI KK·Filed 2017·Granted Jun 25, 2019·1 cites·20 claims
- 0464US9263258B2Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor deviceNAGAI SEIJI·Filed 2009·Granted Feb 16, 2016·2 cites·20 claims
- 0550US9153439B2Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Oct 6, 2015·0 cites·18 claims
- 0643US9691610B2Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Jun 27, 2017·0 cites·17 claims
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