Inventor
CHUANG SHU-YA
TW18 patents
⚠️ This page may combine multiple inventors who share the name “CHUANG SHU-YA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED SEMICONDUCTOR CORP
10 patentsUS6159808ADec 12, 2000
Method of forming self-aligned DRAM cell
UNITED SEMICONDUCTOR CORP40 citations92
US6107159AAug 22, 2000
Method for fabricating a shallow trench isolation structure
UNITED SEMICONDUCTOR CORP31 citations92
US5998259ADec 7, 1999
Method of fabricating dual cylindrical capacitor
UNITED SEMICONDUCTOR CORP34 citations92
US5937309AAug 10, 1999
Method for fabricating shallow trench isolation structure
UNITED SEMICONDUCTOR CORP25 citations92
US6159789ADec 12, 2000
Method for fabricating capacitor
UNITED SEMICONDUCTOR CORP16 citations84
US5960282ASep 28, 1999
Method for fabricating a dynamic random access memory with a vertical pass transistor
UNITED SEMICONDUCTOR CORP17 citations83
US5981337ANov 9, 1999
Method of fabricating stack capacitor
UNITED SEMICONDUCTOR CORP11 citations73
US6190958B1Feb 20, 2001
Fully self-aligned method for fabricating transistor and memory
UNITED SEMICONDUCTOR CORP2 citations62
US6172388B1Jan 9, 2001
Method of fabricating dynamic random access memories
UNITED SEMICONDUCTOR CORP6 citations62
US6083804AJul 4, 2000
Method for fabricating a capacitor in a dynamic random access memory
UNITED SEMICONDUCTOR CORP5 citations62
UNITED MICROELECTRONICS CORP
8 patentsUS6344415B1Feb 5, 2002
Method for forming a shallow trench isolation structure
UNITED MICROELECTRONICS CORP10 citations74
US6218241B1Apr 17, 2001
Fabrication method for a compact DRAM cell
UNITED MICROELECTRONICS CORP13 citations73
US6200854B1Mar 13, 2001
Method of manufacturing dynamic random access memory
UNITED MICROELECTRONICS CORP8 citations73
US6548373B2Apr 15, 2003
Method for forming shallow trench isolation structure
UNITED MICROELECTRONICS CORP5 citations63
US6884689B2Apr 26, 2005
Fabrication of self-aligned bipolar transistor
UNITED MICROELECTRONICS CORP5 citations62
US6774002B2Aug 10, 2004
Structure and method for forming self-aligned bipolar junction transistor with expitaxy base
UNITED MICROELECTRONICS CORP6 citations62
US6417036B1Jul 9, 2002
Method of fabricating dynamic random access memories
UNITED MICROELECTRONICS CORP1 citations51
US6479307B2Nov 12, 2002
Method of monitoring loss of silicon nitride
UNITED MICROELECTRONICS CORP0 citations36