Inventor

HAN MYOUNG-SIK

KR3 patents

Patents

3 patents

US6660573B2Dec 9, 2003

Method of forming a gate electrode in a semiconductor device and method of manufacturing a non-volatile memory device using the same

SAMSUNG ELECTRONICS CO LTD10 citations67

US6642144B2Nov 4, 2003

Method of forming memory device having capacitor including layer of high dielectric constant

SAMSUNG ELECTRONICS CO LTD3 citations60

US6660599B2Dec 9, 2003

Semiconductor device having trench isolation layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations58