Inventor
CHOI SANG-JUN
KR130 patents
⚠️ This page may combine multiple inventors who share the name “CHOI SANG-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
41 patentsUS6485895B1Nov 26, 2002
Methods for forming line patterns in semiconductor substrates
SAMSUNG ELECTRONICS CO LTD55 citations95
US6517990B1Feb 11, 2003
Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
SAMSUNG ELECTRONICS CO LTD40 citations93
US6103450AAug 15, 2000
Photosensitive polymer, dissolution inhibitor and chemically amplified photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD32 citations93
US7176041B2Feb 13, 2007
PAA-based etchant, methods of using same, and resultant structures
SAMSUNG ELECTRONICS CO LTD32 citations92
US6964839B1Nov 15, 2005
Photosensitive polymer having cyclic backbone and resist composition containing the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6844134B2Jan 18, 2005
Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US6803176B2Oct 12, 2004
Methods for forming line patterns in semiconductor substrates
SAMSUNG ELECTRONICS CO LTD17 citations92
US6800418B2Oct 5, 2004
Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US6537727B2Mar 25, 2003
Resist composition comprising photosensitive polymer having loctone in its backbone
SAMSUNG ELECTRONICS CO LTD16 citations92
US6472120B1Oct 29, 2002
Photosensitive polymer and chemically amplified photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD16 citations92
US5851727ADec 22, 1998
Photosensitive polymers and photoresist compositions containing the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US7709277B2May 4, 2010
PAA-based etchant, methods of using same, and resultant structures
SAMSUNG ELECTRONICS CO LTD22 citations89
US7714313B2May 11, 2010
Resistive RAM having at least one varistor and methods of operating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US6753125B2Jun 22, 2004
Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6165680ADec 26, 2000
Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US6143466ANov 7, 2000
Chemically amplified photoresist composition
SAMSUNG ELECTRONICS CO LTD17 citations84
US6045970AApr 4, 2000
Polymer for photoresist, photoresist composition containing the same, and preparation method thereof
SAMSUNG ELECTRONICS CO LTD16 citations84
US5733704AMar 31, 1998
Resist compositions for chemically amplified resists comprising a di(t-butyl)malonyl methyl side group in the base polymer
SAMSUNG ELECTRONICS CO LTD17 citations84
US6284438B1Sep 4, 2001
Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD16 citations83
US6300036B1Oct 9, 2001
Photosensitive polymers and chemically amplified photoresist compositions using the same
SAMSUNG ELECTRONICS CO LTD13 citations82
US6103845AAug 15, 2000
Chemically amplified resist polymers
SAMSUNG ELECTRONICS CO LTD11 citations81
US7562662B2Jul 21, 2009
Cleaning solution and cleaning method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations74
US7216653B2May 15, 2007
Cleaning solution and cleaning method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7170777B2Jan 30, 2007
Phase change memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7105475B2Sep 12, 2006
Cleaning solution and cleaning method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations74
US7018892B2Mar 28, 2006
Semiconductor capacitor structure and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US6833230B2Dec 21, 2004
Photosensitive polymers containing adamantylalkyl vinyl ether, and resist compositions including the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6673513B2Jan 6, 2004
Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US6277538B1Aug 21, 2001
Photosensitive polymer having cyclic backbone and resist composition comprising the same
SAMSUNG ELECTRONICS CO LTD13 citations74
US6143465ANov 7, 2000
Photosensitive polymer having cyclic backbone and resist composition comprising same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6114422ASep 5, 2000
Resist composition containing dialkyl malonate in base polymer
SAMSUNG ELECTRONICS CO LTD9 citations74
US6083659AJul 4, 2000
Polymer mixture for photoresist and photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6080524AJun 27, 2000
Photosensitive polymer having cyclic backbone and resist composition comprising the same
SAMSUNG ELECTRONICS CO LTD14 citations74
US5847063ADec 8, 1998
Resins for use in chemically amplified resists and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US6642336B1Nov 4, 2003
Photosensitive polymer
SAMSUNG ELECTRONICS CO LTD6 citations73
US6280903B1Aug 28, 2001
Chemically amplified resist composition
SAMSUNG ELECTRONICS CO LTD5 citations73
US6171754B1Jan 9, 2001
Chemically amplified resist compositions
SAMSUNG ELECTRONICS CO LTD5 citations73
US6114084ASep 5, 2000
Chemically amplified resist composition
SAMSUNG ELECTRONICS CO LTD6 citations73
US6051362AApr 18, 2000
Silicon containing polymer and chemically amplified resist composition comprising the same
SAMSUNG ELECTRONICS CO LTD12 citations73
US7507958B2Mar 24, 2009
Conductive carbon nanotube tip, probe having the conductive carbon nanotube tip, and method of manufacturing the conductive carbon nanotube tip
SAMSUNG ELECTRONICS CO LTD7 citations72
US5981141ANov 9, 1999
Chemically amplified resists
SAMSUNG ELECTRONICS CO LTD13 citations70
APPLIED MATERIALS INC
3 patentsUS10347500B1Jul 9, 2019
Device fabrication via pulsed plasma
APPLIED MATERIALS INC19 citations92
US10580657B2Mar 3, 2020
Device fabrication via pulsed plasma
APPLIED MATERIALS INC9 citations82
US10460921B2Oct 29, 2019
High lateral to vertical ratio etch process for device manufacturing
APPLIED MATERIALS INC1 citations70
CHOI SANG JUN
2 patentsLG ELECTRONICS INC
1 patentCHOI SANG-JUN
1 patentKIM JIN SUB
1 patentHYUNDAI ELECTRONICS IND
1 patentShowing the top 50 of 130 patents by PatentIndex Score.