Inventor
NITTA SATYANARAYANA V
US78 patents
⚠️ This page may combine multiple inventors who share the name “NITTA SATYANARAYANA V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
37 patentsUS6451712B1Sep 17, 2002
Method for forming a porous dielectric material layer in a semiconductor device and device formed
IBM123 citations99
US9324650B2Apr 26, 2016
Interconnect structures with fully aligned vias
IBM79 citations98
US7037744B2May 2, 2006
Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby
IBM84 citations98
US7030495B2Apr 18, 2006
Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby
IBM64 citations98
US6911400B2Jun 28, 2005
Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
IBM79 citations98
US7405147B2Jul 29, 2008
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM35 citations96
US7179758B2Feb 20, 2007
Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
IBM50 citations96
US6677680B2Jan 13, 2004
Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materials
IBM54 citations96
US6641899B1Nov 4, 2003
Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
IBM43 citations96
US6603204B2Aug 5, 2003
Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
IBM54 citations96
US7892940B2Feb 22, 2011
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM11 citations93
US7534696B2May 19, 2009
Multilayer interconnect structure containing air gaps and method for making
IBM42 citations93
US6930034B2Aug 16, 2005
Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence
IBM43 citations93
US6780499B2Aug 24, 2004
Ordered two-phase dielectric film, and semiconductor device containing the same
IBM24 citations93
US6943451B2Sep 13, 2005
Semiconductor devices containing a discontinuous cap layer and methods for forming same
IBM21 citations92
US6831366B2Dec 14, 2004
Interconnects containing first and second porous low-k dielectrics separated by a porous buried etch stop layer
IBM19 citations92
US6716742B2Apr 6, 2004
Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
IBM24 citations92
US6734096B2May 11, 2004
Fine-pitch device lithography using a sacrificial hardmask
IBM22 citations91
US9911690B2Mar 6, 2018
Interconnect structures with fully aligned vias
IBM6 citations84
US8952539B2Feb 10, 2015
Methods for fabrication of an air gap-containing interconnect structure
IBM5 citations84
US8383507B2Feb 26, 2013
Method for fabricating air gap interconnect structures
IBM8 citations84
US8343868B2Jan 1, 2013
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM6 citations84
US7943480B2May 17, 2011
Sub-lithographic dimensioned air gap formation and related structure
IBM18 citations84
US7749892B2Jul 6, 2010
Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
IBM16 citations84
US7687913B2Mar 30, 2010
Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
IBM10 citations84
US7517637B2Apr 14, 2009
Method of producing self-aligned mask in conjunction with blocking mask, articles produced by same and composition for same
IBM11 citations84
US7435676B2Oct 14, 2008
Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity
IBM9 citations84
US10629086B2Apr 21, 2020
Providing targeted, evidence-based recommendations to improve content by combining static analysis and usage analysis
IBM6 citations83
US6537908B2Mar 25, 2003
Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmask
IBM16 citations82
US8003520B2Aug 23, 2011
Air gap structure having protective metal silicide pads on a metal feature
IBM6 citations74
US7948051B2May 24, 2011
Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
IBM4 citations74
US7592685B2Sep 22, 2009
Device and methodology for reducing effective dielectric constant in semiconductor devices
IBM7 citations74
US6831364B2Dec 14, 2004
Method for forming a porous dielectric material layer in a semiconductor device and device formed
IBM6 citations74
US11164136B2Nov 2, 2021
Recommending personalized job recommendations from automated review of writing samples and resumes
IBM2 citations73
US10204856B2Feb 12, 2019
Interconnect structures with fully aligned vias
IBM1 citations73
US6724069B2Apr 20, 2004
Spin-on cap layer, and semiconductor device containing same
IBM12 citations73
US6710450B2Mar 23, 2004
Interconnect structure with precise conductor resistance and method to form same
IBM11 citations73
EDELSTEIN DANIEL C
4 patentsUS8525169B1Sep 3, 2013
Reliable physical unclonable function for device authentication
EDELSTEIN DANIEL C115 citations98
US8288268B2Oct 16, 2012
Microelectronic structure including air gap
EDELSTEIN DANIEL C24 citations93
US8129286B2Mar 6, 2012
Reducing effective dielectric constant in semiconductor devices
EDELSTEIN DANIEL C11 citations92
US9105693B2Aug 11, 2015
Microelectronic structure including air gap
EDELSTEIN DANIEL C11 citations84
CLEVENGER LAWRENCE A
2 patentsCHANDA KAUSHIK
1 patentBRUCE ROBERT L
1 patentNGUYEN SON VAN
1 patentGATES STEPHEN M
1 patentCABRAL JR CYRIL
1 patentANGYAL MATTHEW S
1 patentGLOBALFOUNDRIES INC
1 patentShowing the top 50 of 78 patents by PatentIndex Score.