Inventor
WANG JYH-HAUR
TW10 patents
Patents
10 patentsUS6191052B1Feb 20, 2001
Method for fabricating an ultra-shallow junction with low resistance using a screen oxide formed by poly re-oxidation in a nitrogen containing atmosphere
TAIWAN SEMICONDUCTOR MFG60 citations95
US6380021B1Apr 30, 2002
Ultra-shallow junction formation by novel process sequence for PMOSFET
TAIWAN SEMICONDUCTOR MFG49 citations92
US5866947AFeb 2, 1999
Post tungsten etch bank anneal, to improve aluminum step coverage
TAIWAN SEMICONDUCTOR MFG20 citations92
US6214682B1Apr 10, 2001
Method for fabricating an ultra-shallow junction with low resistance using a rapid thermal anneal in ammonia to increase activation ratio and reduce diffusion of lightly doped source and drain regions
TAIWAN SEMICONDUCTOR MFG20 citations91
US6117737ASep 12, 2000
Reduction of a hot carrier effect by an additional furnace anneal increasing transient enhanced diffusion for devices comprised with low temperature spacers
TAIWAN SEMICONDUCTOR MFG18 citations82
US6407433B1Jun 18, 2002
Preventing gate oxide damage by post poly definition implantation while gate mask is on
TAIWAN SEMICONDUCTOR MFG5 citations73
US6284579B1Sep 4, 2001
Drain leakage reduction by indium transient enchanced diffusion (TED) for low power applications
TAIWAN SEMICONDUCTOR MFG13 citations73
US5641710AJun 24, 1997
Post tungsten etch back anneal, to improve aluminum step coverage
TAIWAN SEMICONDUCTOR MFG10 citations73
US6121091ASep 19, 2000
Reduction of a hot carrier effect phenomena via use of transient enhanced diffusion processes
TAIWAN SEMICONDUCTOR MFG14 citations72
US6187639B1Feb 13, 2001
Method to prevent gate oxide damage by post poly definition implantation
TAIWAN SEMICONDUCTOR MFG3 citations62