P

Inventor

NAKAYAMA MASAHIRO

JP30 patents
⚠️ This page may combine multiple inventors who share the name “NAKAYAMA MASAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

12 patents
US7786488B2Aug 31, 2010

Nitride semiconductor wafer and method of processing nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES12 citations92
US7195545B2Mar 27, 2007

Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES11 citations92
US6909165B2Jun 21, 2005

Obverse/reverse discriminative rectangular nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES18 citations92
US6875082B2Apr 5, 2005

Nitride semiconductor wafer and method of processing nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES32 citations92
US7749325B2Jul 6, 2010

Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate

SUMITOMO ELECTRIC INDUSTRIES12 citations84
US7535082B2May 19, 2009

Nitride semiconductor wafer and method of processing nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES11 citations84
US7550780B2Jun 23, 2009

Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES9 citations83
US7154131B2Dec 26, 2006

Nitride semiconductor substrate and method of producing same

SUMITOMO ELECTRIC INDUSTRIES12 citations83
US8008165B2Aug 30, 2011

Nitride semiconductor wafer and method of processing nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES6 citations74
US8022438B2Sep 20, 2011

Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES2 citations62
US7387678B2Jun 17, 2008

GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same

SUMITOMO ELECTRIC INDUSTRIES3 citations62
US7390747B2Jun 24, 2008

Nitride semiconductor substrate and method of producing same

SUMITOMO ELECTRIC INDUSTRIES0 citations51

HITACHI LTD

4 patents

RICOH KK

3 patents

VICTOR COMPANY OF JAPAN

2 patents

TOYOTA MOTOR CO LTD

1 patent

MITSUBISHI ELECTRIC CORP

1 patent

ISHIBASHI AKIRA

1 patent

FUJITSU LTD

1 patent

NAKAYAMA MASAHIRO

1 patent

FUTABA DENSHI KOGYO KK

1 patent

TOYOTA JIDOSHOKKI KK

1 patent

ITAMI WORKS OF SUMITOMO ELECTRIC IND LTD

1 patent

MEZAKI YOSHIO

1 patent