P

Inventor

IKEDA MASAO

JP70 patents
⚠️ This page may combine multiple inventors who share the name “IKEDA MASAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONY CORP

32 patents
US6111277AAug 29, 2000

Semiconductor device as well as light emitting semiconductor device

SONY CORP122 citations99
US6501154B2Dec 31, 2002

Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure

SONY CORP79 citations98
US7119487B2Oct 10, 2006

Semiconductor light emitting device with stacked light emitting elements

SONY CORP49 citations96
US6312967B1Nov 6, 2001

Semiconductor device and manufacture method thereof, as well as light emitting semiconductor device

SONY CORP46 citations96
US5993542ANov 30, 1999

Method for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semiconductor substrate

SONY CORP85 citations96
US6956322B2Oct 18, 2005

Semiconductor light emitting device with stacked light emitting elements

SONY CORP34 citations93
US6870193B2Mar 22, 2005

Semiconductor light emitting device and its manufacturing method

SONY CORP22 citations92
US6509579B2Jan 21, 2003

Semiconductor device

SONY CORP45 citations92
US7528540B2May 5, 2009

Light emitting device and optical device using the same

SONY CORP11 citations84
US6991952B2Jan 31, 2006

Method of manufacturing semiconductor device

SONY CORP17 citations84
US6603147B1Aug 5, 2003

Semiconductor light emitting device

SONY CORP16 citations84
US6836498B2Dec 28, 2004

Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof

SONY CORP14 citations83
US4740977AApr 26, 1988

Semiconductor laser device

SONY CORP20 citations82
US7964419B2Jun 21, 2011

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

SONY CORP4 citations74
US7339195B2Mar 4, 2008

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

SONY CORP6 citations74
US6577662B1Jun 10, 2003

Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof

SONY CORP9 citations74
US5989339ANov 23, 1999

MBE system and semiconductor device fabricated, using same

SONY CORP7 citations74
US5780322AJul 14, 1998

Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser

SONY CORP15 citations74
US5695556ADec 9, 1997

Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination

SONY CORP9 citations74
US5633514AMay 27, 1997

Semiconductor light emitting device with lattice-matching and lattice-mismatching

SONY CORP7 citations74
US7149235B2Dec 12, 2006

Multi-beam semiconductor laser device

SONY CORP9 citations73
US5481558AJan 2, 1996

Light emitting device

SONY CORP8 citations73
US5943355AAug 24, 1999

Semiconductor light emitting device

SONY CORP7 citations72
US5471067ANov 28, 1995

Semiconductor metal contacting structure and a light emitting device

SONY CORP14 citations70
US7439546B2Oct 21, 2008

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

SONY CORP1 citations63
US7125732B2Oct 24, 2006

Semiconductor light emitting device and its manufacturing method

SONY CORP2 citations63
US5872023AFeb 16, 1999

Method of fabricating of light emitting device with controlled lattice mismatch

SONY CORP4 citations63
US5865897AFeb 2, 1999

Method of producing film of nitrogen-doped II-VI group compound semiconductor

SONY CORP4 citations63
US6950451B2Sep 27, 2005

Multi-beam semiconductor laser element

SONY CORP4 citations62
US6471769B2Oct 29, 2002

Method of manufacturing a nitride series III-V group compound semiconductor

SONY CORP6 citations62
US5234842AAug 10, 1993

Method of producing p-typed CdS

SONY CORP5 citations62
US7372080B2May 13, 2008

Gan semiconductor device

SONY CORP4 citations61

SUMITOMO ELECTRIC INDUSTRIES

4 patents

SUMITOMO BAKELITE CO

3 patents

AJINOMOTO KK

2 patents

KURAMOTO MASARU

1 patent

SEIKISUI CHEMICAL CO LTD

1 patent

IKEDA MASAO

1 patent

HAYASHIBARA BIOCHEM LAB

1 patent

SUZUKI YUTAKA

1 patent

NIHON IYAKUHIN KOGYO CO LTD

1 patent

OKI TOMOYUKI

1 patent

OOTA MAKOTO

1 patent

YOKOYAMA HIROYUKI

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.