Inventor

FISHBURN FRED

US35 patents

⚠️ This page may combine multiple inventors who share the name “FISHBURN FRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FISHBURN FRED

MICRON TECHNOLOGY INC

Integrated circuit having a barrier structure

Method of forming integrated circuitry, method of forming a capacitor, method of forming DRAM integrated circuitry and DRAM integrated category

Method of forming a capacitor container electrode and method of patterning a metal layer by selectively silicizing the electrode or metal layer and removing the silicized portion

Semiconductor device precursor structures to a double-sided capacitor or a contact

Method of forming a contact using a sacrificial structure

Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby

Methods of forming a plurality of capacitors

Method of forming a double-sided capacitor

MEMS heat pumps for integrated circuit heat dissipation

Method of forming a contact structure including a vertical barrier structure and two barrier layers

Methods of forming a double-sided capacitor or a contact using a sacrificial structure

MEMS heat pumps for integrated circuit heat dissipation

Low temperature nitride used as Cu barrier layer

Method of forming integrated circuitry, method of forming a capacitor and method of forming DRAM integrated circuitry

Method for forming controlled geometry hardmasks including subresolution elements

Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby

Microfeature workpieces and methods of forming a redistribution layer on microfeature workpieces

Contact structure

Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby

Transistor structure having reduced transistor leakage attributes

Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby

Low temperature nitride used as Cu barrier layer

Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same

Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby

Transistor structure having reduced transistor leakage attributes

Low temperature nitride used as Cu barrier layer

Low resistance peripheral local interconnect contacts with selective wet strip of titanium

Low resistance peripheral local interconnect contacts with selective wet strip of titanium

APPLIED MATERIALS INC

CMOS over array of 3-D DRAM device

L-type wordline connection structure for three-dimensional memory

CMOS over array of 3-D DRAM device

Three dimensional memory device and method of fabrication

MICRO TECHNOLOGY INC

MEMS heat pumps for integrated circuit heat dissipation

MCDANIEL TERRENCE

Methods of forming conductive contacts

FISHBURN FRED

Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same