Inventor
CAPPELLETTI PAOLO
IT30 patents
⚠️ This page may combine multiple inventors who share the name “CAPPELLETTI PAOLO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
14 patentsUS7012832B1Mar 14, 2006
Magnetic memory cell with plural read transistors
ST MICROELECTRONICS SRL160 citations98
US5942004AAug 24, 1999
Device and a method for storing data and corresponding error-correction information
ST MICROELECTRONICS SRL125 citations98
US6222775B1Apr 24, 2001
Flash compatible EEPROM
ST MICROELECTRONICS SRL24 citations92
US6876033B2Apr 5, 2005
Electrically erasable and programmable non-volatile memory cell
ST MICROELECTRONICS SRL19 citations91
US6172908B1Jan 9, 2001
Controlled hot-electron writing method for non-volatile memory cells
ST MICROELECTRONICS SRL45 citations89
US6275960B1Aug 14, 2001
Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof
ST MICROELECTRONICS SRL19 citations84
US6576950B1Jun 10, 2003
EEPROM type non-volatile memory cell and corresponding production method
ST MICROELECTRONICS SRL13 citations83
US6410389B1Jun 25, 2002
Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same
ST MICROELECTRONICS SRL17 citations83
US6284585B1Sep 4, 2001
Electronic memory device having bit lines with block selector switches
ST MICROELECTRONICS SRL6 citations73
US5969977AOct 19, 1999
Electronic memory device having bit lines with block selector switches
ST MICROELECTRONICS SRL5 citations73
US7304485B2Dec 4, 2007
Analysis of the quality of contacts and vias in multi-metal fabrication processes of semiconductor devices, method and test chip architecture
ST MICROELECTRONICS SRL3 citations63
US6532171B2Mar 11, 2003
Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory units
ST MICROELECTRONICS SRL2 citations63
US6101124AAug 8, 2000
Memory block for realizing semiconductor memory devices and corresponding manufacturing process
ST MICROELECTRONICS SRL0 citations52
US6903995B2Jun 7, 2005
Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method
ST MICROELECTRONICS SRL1 citations51
SGS THOMSON MICROELECTRONICS
11 patentsUS6074916AJun 13, 2000
FLASH-EPROM with embedded EEPROM
SGS THOMSON MICROELECTRONICS58 citations96
US5612913AMar 18, 1997
Byte erasable EEPROM fully compatible with a single power supply flash-EPROM process
SGS THOMSON MICROELECTRONICS47 citations92
US5850092ADec 15, 1998
FLASH-EPROM with embedded EEPROM
SGS THOMSON MICROELECTRONICS14 citations74
US5757719AMay 26, 1998
Page-mode memory device with multiple-level memory cells
SGS THOMSON MICROELECTRONICS7 citations74
US5322803AJun 21, 1994
Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells
SGS THOMSON MICROELECTRONICS13 citations73
US6841445B2Jan 11, 2005
Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric
SGS THOMSON MICROELECTRONICS1 citations63
US6399444B1Jun 4, 2002
Method of making floating gate non-volatile memory cell with low erasing voltage
SGS THOMSON MICROELECTRONICS3 citations63
US6147380ANov 14, 2000
Floating gate non-volatile memory cell with low erasing voltage and having different potential barriers
SGS THOMSON MICROELECTRONICS3 citations63
US6054731AApr 25, 2000
Floating gate non-volatile memory cell with low erasing voltage and manufacturing method
SGS THOMSON MICROELECTRONICS3 citations63
US5926416AJul 20, 1999
Electrically programmable non-volatile memory cells device for a reduced number of programming cycles
SGS THOMSON MICROELECTRONICS3 citations57
US6710394B2Mar 23, 2004
Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric
SGS THOMSON MICROELECTRONICS0 citations52