Inventor
IWASE TAIRA
JP23 patents
⚠️ This page may combine multiple inventors who share the name “IWASE TAIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
22 patentsUS5305284AApr 19, 1994
Semiconductor memory device
TOSHIBA KK98 citations96
US6034910AMar 7, 2000
Semiconductor memory device to which serial access is made and a method for accessing the same
TOSHIBA KK27 citations92
US5392233AFeb 21, 1995
Read only memory capable of realizing high-speed read operation
TOSHIBA KK36 citations92
US5208780AMay 4, 1993
Structure of electrically programmable read-only memory cells and redundancy signature therefor
TOSHIBA KK22 citations89
US4970686ANov 13, 1990
Semiconductor memory cells and semiconductor memory device employing the semiconductor memory cells
TOSHIBA KK38 citations89
US5949703ASep 7, 1999
Semiconductor memory device in which data in programmable ROM can be apparently rewritten
TOSHIBA KK13 citations74
US4855248AAug 8, 1989
Method of making a semiconductor ROM device
TOSHIBA KK8 citations74
US4748492AMay 31, 1988
Read only memory
TOSHIBA KK8 citations74
US4649412AMar 10, 1987
Read only semiconductor memory device with polysilicon drain extensions
TOSHIBA KK8 citations74
US7183838B2Feb 27, 2007
Semiconductor device having internal power supply voltage dropping circuit
TOSHIBA KK7 citations73
US5446700AAug 29, 1995
Decoder circuit having CMOS inverter circuits
TOSHIBA KK18 citations73
US5349563ASep 20, 1994
Mask ROM
TOSHIBA KK10 citations73
US5172337ADec 15, 1992
Semiconductor memory device
TOSHIBA KK11 citations72
US5257230AOct 26, 1993
Memory device including redundancy cells with programmable fuel elements and process of manufacturing the same
TOSHIBA KK14 citations70
US4892841AJan 9, 1990
Method of manufacturing a read only semiconductor memory device
TOSHIBA KK2 citations63
US4737835AApr 12, 1988
Read only memory semiconductor device
TOSHIBA KK3 citations63
US6864719B2Mar 8, 2005
Semiconductor device protecting built-in transistor from the voltage applied at test mode
TOSHIBA KK5 citations62
US6697285B2Feb 24, 2004
Semiconductor memory device
TOSHIBA KK3 citations62
US6600685B2Jul 29, 2003
Semiconductor memory device having test mode
TOSHIBA KK2 citations62
US5403765AApr 4, 1995
Method of manufacturing double-layer gate programmable ROM
TOSHIBA KK2 citations62
US6704922B2Mar 9, 2004
Correcting method of mask and mask manufactured by said method
TOSHIBA KK0 citations52
US7145813B2Dec 5, 2006
Semiconductor device with circuit for detecting abnormal waveform of signal and preventing the signal from being transmitted
TOSHIBA KK0 citations41