Inventor
CHOWDHURY MURSHED M
US12 patents
⚠️ This page may combine multiple inventors who share the name “CHOWDHURY MURSHED M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
6 patentsUS8952460B2Feb 10, 2015
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
IBM7 citations84
US8941189B2Jan 27, 2015
Fin-shaped field effect transistor (finFET) structures having multiple threshold voltages (Vt) and method of forming
IBM4 citations71
US9379185B2Jun 28, 2016
Method of forming channel region dopant control in fin field effect transistor
IBM2 citations62
US9190418B2Nov 17, 2015
Junction butting in SOI transistor with embedded source/drain
IBM0 citations52
US10672907B2Jun 2, 2020
Channel region dopant control in fin field effect transistor
IBM0 citations51
US8829616B2Sep 9, 2014
Method and structure for body contacted FET with reduced body resistance and source to drain contact leakage
IBM0 citations41
GLOBALFOUNDRIES INC
3 patentsUS9991167B2Jun 5, 2018
Method and IC structure for increasing pitch between gates
GLOBALFOUNDRIES INC2 citations73
US9431485B2Aug 30, 2016
Formation of finFET junction
GLOBALFOUNDRIES INC2 citations59
US9748235B2Aug 29, 2017
Gate stack for integrated circuit structure and method of forming same
GLOBALFOUNDRIES INC0 citations38