Inventor
MAURELLI ALFONSO
IT29 patents
⚠️ This page may combine multiple inventors who share the name “MAURELLI ALFONSO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
25 patentsUS6713347B2Mar 30, 2004
Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
ST MICROELECTRONICS SRL18 citations92
US6410387B1Jun 25, 2002
Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
ST MICROELECTRONICS SRL38 citations92
US6181602B1Jan 30, 2001
Device and method for reading nonvolatile memory cells
ST MICROELECTRONICS SRL23 citations92
US5307312AApr 26, 1994
Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process
ST MICROELECTRONICS SRL24 citations92
US6876033B2Apr 5, 2005
Electrically erasable and programmable non-volatile memory cell
ST MICROELECTRONICS SRL19 citations91
US6627928B2Sep 30, 2003
Method of manufacturing an integrated circuit, for integrating an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip
ST MICROELECTRONICS SRL20 citations90
US6482698B2Nov 19, 2002
Method of manufacturing an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip
ST MICROELECTRONICS SRL34 citations90
US6275960B1Aug 14, 2001
Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof
ST MICROELECTRONICS SRL19 citations84
US6576950B1Jun 10, 2003
EEPROM type non-volatile memory cell and corresponding production method
ST MICROELECTRONICS SRL13 citations83
US6410389B1Jun 25, 2002
Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same
ST MICROELECTRONICS SRL17 citations83
US5936276AAug 10, 1999
Single polysilicon level flash EEPROM cell and manufacturing process therefor
ST MICROELECTRONICS SRL16 citations82
US5479367ADec 26, 1995
N-channel single polysilicon level EPROM cell
ST MICROELECTRONICS SRL16 citations82
US6451653B2Sep 17, 2002
Manufacturing process for the integration in a semiconductor chip of an integrated circuit including a high-density integrated circuit components portion and a high-performance logic integrated circuit components portion
ST MICROELECTRONICS SRL7 citations74
US6399442B1Jun 4, 2002
Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device
ST MICROELECTRONICS SRL6 citations74
US5486486AJan 23, 1996
Process for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devices
ST MICROELECTRONICS SRL10 citations73
US7001800B2Feb 21, 2006
Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit
ST MICROELECTRONICS SRL8 citations72
US6350637B1Feb 26, 2002
Method of fabrication of a no-field MOS transistor
ST MICROELECTRONICS SRL12 citations71
US7410872B2Aug 12, 2008
Sealing method for electronic devices formed on a common semiconductor substrate and corresponding circuit structure
ST MICROELECTRONICS SRL3 citations63
US7304485B2Dec 4, 2007
Analysis of the quality of contacts and vias in multi-metal fabrication processes of semiconductor devices, method and test chip architecture
ST MICROELECTRONICS SRL3 citations63
US6461922B1Oct 8, 2002
Method for the integration of resistors and esd self-protected transistors in an integrated device with a memory matrix manufactured by means of a process featuring self-aligned source (sas) formation and junction salicidation
ST MICROELECTRONICS SRL4 citations63
US6355523B1Mar 12, 2002
Manufacturing process for making single polysilicon level flash EEPROM cell
ST MICROELECTRONICS SRL2 citations63
US6686241B2Feb 3, 2004
Method of forming low-resistivity connections in non-volatile memories
ST MICROELECTRONICS SRL6 citations57
US5600590AFeb 4, 1997
Process for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devices
ST MICROELECTRONICS SRL0 citations51
US7320904B2Jan 22, 2008
Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit
ST MICROELECTRONICS SRL0 citations50
US7910978B2Mar 22, 2011
Process for manufacturing a memory device integrated on a semiconductor substrate and comprising nanocrystal memory cells and CMOS transistors
ST MICROELECTRONICS SRL0 citations42
SGS THOMSON MICROELECTRONICS
2 patentsUS6188121B1Feb 13, 2001
High voltage capacitor
SGS THOMSON MICROELECTRONICS15 citations84
US5075246ADec 24, 1991
Method of manufacturing integrated circuits having electronic components of two different types each having pairs of electrodes obtained from the same polycrystalline silicon layers and separated by different dielectric materials
SGS THOMSON MICROELECTRONICS8 citations73