Inventor
RAVI KRAMADHATI V
US54 patents
⚠️ This page may combine multiple inventors who share the name “RAVI KRAMADHATI V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
38 patentsUS6548313B1Apr 15, 2003
Amorphous carbon insulation and carbon nanotube wires
INTEL CORP53 citations96
US6924170B2Aug 2, 2005
Diamond-silicon hybrid integrated heat spreader
INTEL CORP34 citations93
US6830813B2Dec 14, 2004
Stress-reducing structure for electronic devices
INTEL CORP29 citations93
US6730972B2May 4, 2004
Amorphous carbon insulation and carbon nanotube wires
INTEL CORP25 citations93
US6621022B1Sep 16, 2003
Reliable opposing contact structure
INTEL CORP32 citations93
US6770966B2Aug 3, 2004
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
INTEL CORP21 citations92
US6387572B1May 14, 2002
Low CTE substrate for reflective EUV lithography
INTEL CORP25 citations86
US7492041B2Feb 17, 2009
Diamond-silicon hybrid integrated heat spreader
INTEL CORP9 citations84
US7449780B2Nov 11, 2008
Apparatus to minimize thermal impedance using copper on die backside
INTEL CORP11 citations84
US7244963B2Jul 17, 2007
Double gate field effect transistor with diamond film
INTEL CORP13 citations84
US6987028B2Jan 17, 2006
Method of fabricating a microelectronic die
INTEL CORP13 citations84
US6940096B2Sep 6, 2005
Double gate field effect transistor with diamond film
INTEL CORP12 citations84
US6936497B2Aug 30, 2005
Method of forming electronic dies wherein each die has a layer of solid diamond
INTEL CORP18 citations84
US6706981B1Mar 16, 2004
Techniques to fabricate a reliable opposing contact structure
INTEL CORP14 citations84
US7449361B2Nov 11, 2008
Semiconductor substrate with islands of diamond and resulting devices
INTEL CORP8 citations74
US6982133B2Jan 3, 2006
Damage-resistant coatings for EUV lithography components
INTEL CORP8 citations74
US6964880B2Nov 15, 2005
Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby
INTEL CORP8 citations74
US6743697B2Jun 1, 2004
Thin silicon circuits and method for making the same
INTEL CORP9 citations74
US6406981B1Jun 18, 2002
Method for the manufacture of semiconductor devices and circuits
INTEL CORP13 citations74
US7170098B2Jan 30, 2007
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
INTEL CORP8 citations73
US7071552B2Jul 4, 2006
IC die with directly bonded liquid cooling device
INTEL CORP7 citations73
US6921706B2Jul 26, 2005
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
INTEL CORP8 citations73
US6423615B1Jul 23, 2002
Silicon wafers for CMOS and other integrated circuits
INTEL CORP12 citations70
US7365003B2Apr 29, 2008
Carbon nanotube interconnects in porous diamond interlayer dielectrics
INTEL CORP8 citations68
US7604834B2Oct 20, 2009
Formation of dielectric film by alternating between deposition and modification
INTEL CORP3 citations63
US7384693B2Jun 10, 2008
Diamond-like carbon films with low dielectric constant and high mechanical strength
INTEL CORP4 citations63
US7355247B2Apr 8, 2008
Silicon on diamond-like carbon devices
INTEL CORP5 citations63
US7098047B2Aug 29, 2006
Wafer reuse techniques
INTEL CORP3 citations63
US6238482B1May 29, 2001
Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer
INTEL CORP5 citations63
US7501330B2Mar 10, 2009
Methods of forming a high conductivity diamond film and structures formed thereby
INTEL CORP3 citations62
US7432532B2Oct 7, 2008
Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
INTEL CORP1 citations62
US6847044B2Jan 25, 2005
Electrical discharge gas plasma EUV source insulator components
INTEL CORP4 citations62
US7041993B2May 9, 2006
Protective coatings for radiation source components
INTEL CORP2 citations61
US6809328B2Oct 26, 2004
Protective coatings for radiation source components
INTEL CORP3 citations61
US7875934B2Jan 25, 2011
Semiconductor substrate with islands of diamond and resulting devices
INTEL CORP1 citations52
US7842537B2Nov 30, 2010
Stressed semiconductor using carbon and method for producing the same
INTEL CORP0 citations52
US7329588B2Feb 12, 2008
Forming a reticle for extreme ultraviolet radiation and structures formed thereby
INTEL CORP0 citations52
US7417255B2Aug 26, 2008
Methods of forming a high conductivity diamond film and structures formed thereby
INTEL CORP0 citations51
APPLIED MATERIALS INC
3 patentsUS5661093AAug 26, 1997
Method for the stabilization of halogen-doped films through the use of multiple sealing layers
APPLIED MATERIALS INC354 citations98
US6132517AOct 17, 2000
Multiple substrate processing apparatus for enhanced throughput
APPLIED MATERIALS INC27 citations93
US6070550AJun 6, 2000
Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers
APPLIED MATERIALS INC44 citations92
CRYSTALLUME
3 patentsUS5131963AJul 21, 1992
Silicon on insulator semiconductor composition containing thin synthetic diamone films
CRYSTALLUME65 citations96
US5607723AMar 4, 1997
Method for making continuous thin diamond film
CRYSTALLUME71 citations95
US5432003AJul 11, 1995
Continuous thin diamond film and method for making same
CRYSTALLUME55 citations95
RAVI KRAMADHATI V
2 patentsCRYSTAL SOLAR INC
2 patentsASTHANA ASHISH
1 patentHUA FAY
1 patentShowing the top 50 of 54 patents by PatentIndex Score.