Inventor · disambiguated record
Sandra G. Malhotra
Also filed as: MALHOTRA SANDRA · MALHOTRA SANDRA G · MALHOTRA SANDRA GUY
113 granted patents·16 pending applications·1,572 citations·filing 1999–2015
99Inventor score
Top patents by PatentIndex Score
129 records- 0198US8144498B2Resistive-switching nonvolatile memory elementsKUMAR PRAGATI·Filed 2008·Granted Mar 27, 2012·111 cites·9 claims
- 0298US6153935ADual etch stop/diffusion barrier for damascene interconnectsIBM·Filed 1999·Granted Nov 28, 2000·376 cites·22 claims
- 0397US7824935B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2008·Granted Nov 2, 2010·25 cites·8 claims
- 0497US6358832B1Method of forming barrier layers for damascene interconnectsIBM·Filed 2000·Granted Mar 19, 2002·119 cites·27 claims
- 0596US7863087B1Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2008·Granted Jan 4, 2011·25 cites·24 claims
- 0695US8581318B1Enhanced non-noble electrode layers for DRAM capacitor cellINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·21 cites·20 claims
- 0795US8294219B2Nonvolatile memory element including resistive switching metal oxide layersMALHOTRA SANDRA G·Filed 2008·Granted Oct 23, 2012·39 cites·15 claims
- 0895US6975032B2Copper recess process with application to selective capping and electroless platingIBM·Filed 2002·Granted Dec 13, 2005·85 cites·19 claims
- 0994US8089157B2Contact metallurgy structureCABRAL JR CYRIL·Filed 2010·Granted Jan 3, 2012·14 cites·12 claims
- 1094US7405154B2Structure and method of forming electrodeposited contactsIBM·Filed 2006·Granted Jul 29, 2008·20 cites·1 claims
- 1194US7390739B2Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regionLAZOVSKY DAVID E·Filed 2005·Granted Jun 24, 2008·18 cites·26 claims
- 1294US7247946B2On-chip Cu interconnection using 1 to 5 nm thick metal capIBM·Filed 2005·Granted Jul 24, 2007·35 cites·14 claims
- 1392US9105646B2Methods for reproducible flash layer depositionINTERMOLECULAR INC·Filed 2012·Granted Aug 11, 2015·12 cites·15 claims
- 1492US8969169B1DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2013·Granted Mar 3, 2015·13 cites·20 claims
- 1592US8435854B1Top electrode templating for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted May 7, 2013·11 cites·21 claims
- 1692US7064064B2Copper recess process with application to selective capping and electroless platingIBM·Filed 2005·Granted Jun 20, 2006·22 cites·10 claims
- 1791US9281357B2DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2015·Granted Mar 8, 2016·7 cites·19 claims
- 1891US8415657B2Enhanced work function layer supporting growth of rutile phase titanium oxideRUI XIANGXIN·Filed 2010·Granted Apr 9, 2013·13 cites·12 claims
- 1991US7270848B2Method for increasing deposition rates of metal layers from metal-carbonyl precursorsIBM·Filed 2004·Granted Sep 18, 2007·45 cites·15 claims
- 2090US7977153B2Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2010·Granted Jul 12, 2011·7 cites·7 claims
- 2190US7851357B2Method of forming electrodeposited contactsIBM·Filed 2008·Granted Dec 14, 2010·13 cites·8 claims
- 2290US7749881B2Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regionINTERMOLECULAR INC·Filed 2005·Granted Jul 6, 2010·11 cites·8 claims
- 2389US8278735B2Yttrium and titanium high-k dielectric filmsHASHIM IMRAN·Filed 2010·Granted Oct 2, 2012·10 cites·22 claims
- 2489US7927947B2Methods for depositing high-K dielectricsINTERMOLECULAR INC·Filed 2009·Granted Apr 19, 2011·10 cites·20 claims
- 2589US7098676B2Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitorIBM·Filed 2003·Granted Aug 29, 2006·49 cites·12 claims
- 2688US6989321B2Low-pressure deposition of metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jan 24, 2006·41 cites·32 claims
- 2788US6974531B2Method for electroplating on resistive substratesIBM·Filed 2002·Granted Dec 13, 2005·20 cites·23 claims
- 2887US9012298B2Methods for reproducible flash layer depositionINTERMOLECULAR INC·Filed 2012·Granted Apr 21, 2015·7 cites·12 claims
- 2987US8709943B2Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regionINTERMOLECULAR INC·Filed 2013·Granted Apr 29, 2014·4 cites·20 claims
- 3087US8530348B1Integration of non-noble DRAM electrodeMALHOTRA SANDRA G·Filed 2012·Granted Sep 10, 2013·9 cites·16 claims
- 3187US8030772B2Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regionINTERMOLECULAR INC·Filed 2008·Granted Oct 4, 2011·6 cites·16 claims
- 3286US8765570B2Manufacturable high-k DRAM MIM capacitor structureMALHOTRA SANDRA·Filed 2012·Granted Jul 1, 2014·7 cites·20 claims
- 3386US8193090B2Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regionLAZOVSKY DAVID E·Filed 2011·Granted Jun 5, 2012·4 cites·16 claims
- 3486US6380075B1Method for forming an open-bottom liner for a conductor in an electronic structure and device formedIBM·Filed 2000·Granted Apr 30, 2002·36 cites·10 claims
- 3585US8679939B2Manufacturable high-k DRAM MIM capacitor structureINTERMOLECULAR INC·Filed 2013·Granted Mar 25, 2014·6 cites·20 claims
- 3685US8546236B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Oct 1, 2013·5 cites·19 claims
- 3785US8440537B1Adsorption site blocking method for co-doping ALD filmsMALHOTRA SANDRA·Filed 2011·Granted May 14, 2013·6 cites·20 claims
- 3885US8143619B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateVERMA GAURAV·Filed 2010·Granted Mar 27, 2012·4 cites·6 claims
- 3984US8741712B2Leakage reduction in DRAM MIM capacitorsCHIANG TONY P·Filed 2012·Granted Jun 3, 2014·6 cites·20 claims
- 4084US8574998B2Leakage reduction in DRAM MIM capacitorsMALHOTRA SANDRA·Filed 2011·Granted Nov 5, 2013·7 cites·15 claims
- 4184US8367463B2Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2011·Granted Feb 5, 2013·4 cites·10 claims
- 4284US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 4383US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 4483US8581319B2Semiconductor stacks including catalytic layersINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·4 cites·17 claims
- 4583US8415227B2High performance dielectric stack for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted Apr 9, 2013·5 cites·10 claims
- 4683US8383430B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2012·Granted Feb 26, 2013·3 cites·12 claims
- 4783US7968452B2Titanium-based high-K dielectric filmsINTERMOLECULAR INC·Filed 2009·Granted Jun 28, 2011·6 cites·20 claims
- 4883US6949461B2Method for depositing a metal layer on a semiconductor interconnect structureIBM·Filed 2002·Granted Sep 27, 2005·37 cites·18 claims
- 4982US8541868B2Top electrode templating for DRAM capacitorINTERMOLECULAR INC·Filed 2012·Granted Sep 24, 2013·4 cites·21 claims
- 5082US7879710B2Substrate processing including a masking layerINTERMOLECULAR INC·Filed 2006·Granted Feb 1, 2011·6 cites·13 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
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