P

Inventor

LIN TONY

TW76 patents
⚠️ This page may combine multiple inventors who share the name “LIN TONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

38 patents
US6319807B1Nov 20, 2001

Method for forming a semiconductor device by using reverse-offset spacer process

UNITED MICROELECTRONICS CORP95 citations98
US6064107AMay 16, 2000

Gate structure of a semiconductor device having an air gap

UNITED MICROELECTRONICS CORP88 citations98
US5950090ASep 7, 1999

Method for fabricating a metal-oxide semiconductor transistor

UNITED MICROELECTRONICS CORP125 citations98
US6013569AJan 11, 2000

One step salicide process without bridging

UNITED MICROELECTRONICS CORP86 citations96
US5990015ANov 23, 1999

Dual damascence process

UNITED MICROELECTRONICS CORP60 citations96
US5914519AJun 22, 1999

Air-gap spacer of a metal-oxide-semiconductor device

UNITED MICROELECTRONICS CORP80 citations96
US6297082B1Oct 2, 2001

Method of fabricating a MOS transistor with local channel ion implantation regions

UNITED MICROELECTRONICS CORP89 citations95
US6274450B1Aug 14, 2001

Method for implementing metal oxide semiconductor field effect transistor

UNITED MICROELECTRONICS CORP20 citations93
US6190981B1Feb 20, 2001

Method for fabricating metal oxide semiconductor

UNITED MICROELECTRONICS CORP48 citations93
US6177336B1Jan 23, 2001

Method for fabricating a metal-oxide semiconductor device

UNITED MICROELECTRONICS CORP40 citations93
US6174778B1Jan 16, 2001

Method of fabricating metal oxide semiconductor

UNITED MICROELECTRONICS CORP34 citations93
US6153478ANov 28, 2000

STI process for eliminating kink effect

UNITED MICROELECTRONICS CORP46 citations93
US6153483ANov 28, 2000

Method for manufacturing MOS device

UNITED MICROELECTRONICS CORP24 citations93
US6083827AJul 4, 2000

Method for fabricating local interconnect

UNITED MICROELECTRONICS CORP22 citations93
US6077769AJun 20, 2000

Method of fabricating a daul damascene structure

UNITED MICROELECTRONICS CORP46 citations93
US6069061AMay 30, 2000

Method for forming polysilicon gate

UNITED MICROELECTRONICS CORP19 citations93
US6057208AMay 2, 2000

Method of forming shallow trench isolation

UNITED MICROELECTRONICS CORP20 citations93
US6048771AApr 11, 2000

Shallow trench isolation technique

UNITED MICROELECTRONICS CORP41 citations93
US6015746AJan 18, 2000

Method of fabricating semiconductor device with a gate-side air-gap structure

UNITED MICROELECTRONICS CORP30 citations93
US6015741AJan 18, 2000

Method for forming self-aligned contact window

UNITED MICROELECTRONICS CORP20 citations93
US6015753AJan 18, 2000

Method of forming a self-aligned silicide

UNITED MICROELECTRONICS CORP26 citations93
US6008118ADec 28, 1999

Method of fabricating a barrier layer

UNITED MICROELECTRONICS CORP25 citations93
US5981383ANov 9, 1999

Method of fabricating a salicide layer of a device electrode

UNITED MICROELECTRONICS CORP32 citations93
US5972763AOct 26, 1999

Method of fabricating an air-gap spacer of a metal-oxide-semiconductor device

UNITED MICROELECTRONICS CORP25 citations93
US5895254AApr 20, 1999

Method of manufacturing shallow trench isolation structure

UNITED MICROELECTRONICS CORP35 citations93
US5874353AFeb 23, 1999

Method of forming a self-aligned silicide device

UNITED MICROELECTRONICS CORP52 citations93
US5780348AJul 14, 1998

Method of making a self-aligned silicide component

UNITED MICROELECTRONICS CORP31 citations93
US6083783AJul 4, 2000

Method of manufacturing complementary metallic-oxide-semiconductor

UNITED MICROELECTRONICS CORP24 citations92
US6100191AAug 8, 2000

Method for forming self-aligned silicide layers on sub-quarter micron VLSI circuits

UNITED MICROELECTRONICS CORP21 citations88
US6902994B2Jun 7, 2005

Method for fabricating transistor having fully silicided gate

UNITED MICROELECTRONICS CORP23 citations86
US6365468B1Apr 2, 2002

Method for forming doped p-type gate with anti-reflection layer

UNITED MICROELECTRONICS CORP16 citations84
US6294432B1Sep 25, 2001

Super halo implant combined with offset spacer process

UNITED MICROELECTRONICS CORP17 citations84
US6187645B1Feb 13, 2001

Method for manufacturing semiconductor device capable of preventing gate-to-drain capacitance and eliminating birds beak formation

UNITED MICROELECTRONICS CORP19 citations84
US6174791B1Jan 16, 2001

Method for a pre-amorphization

UNITED MICROELECTRONICS CORP18 citations83
US6559016B2May 6, 2003

Method of manufacturing low-leakage, high-performance device

UNITED MICROELECTRONICS CORP8 citations74
US6316303B1Nov 13, 2001

Method of fabricating a MOS transistor having SEG silicon

UNITED MICROELECTRONICS CORP13 citations74
US6297112B1Oct 2, 2001

Method of forming a MOS transistor

UNITED MICROELECTRONICS CORP14 citations74
US6274448B1Aug 14, 2001

Method of suppressing junction capacitance of source/drain regions

UNITED MICROELECTRONICS CORP10 citations74

LIN TONY

3 patents

COOPER BRANDS INC

3 patents

(unassigned)

2 patents

POWER QUOTIENT INTERNAT COMPAN

1 patent

UNITED MICOELECTRONICS CORP

1 patent

AGILENT TECHNOLOGIES INC

1 patent

HSIUNG WILLIAM

1 patent

Showing the top 50 of 76 patents by PatentIndex Score.