Inventor
LIN TONY
TW76 patents
⚠️ This page may combine multiple inventors who share the name “LIN TONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
38 patentsUS6319807B1Nov 20, 2001
Method for forming a semiconductor device by using reverse-offset spacer process
UNITED MICROELECTRONICS CORP95 citations98
US6064107AMay 16, 2000
Gate structure of a semiconductor device having an air gap
UNITED MICROELECTRONICS CORP88 citations98
US5950090ASep 7, 1999
Method for fabricating a metal-oxide semiconductor transistor
UNITED MICROELECTRONICS CORP125 citations98
US6013569AJan 11, 2000
One step salicide process without bridging
UNITED MICROELECTRONICS CORP86 citations96
US5990015ANov 23, 1999
Dual damascence process
UNITED MICROELECTRONICS CORP60 citations96
US5914519AJun 22, 1999
Air-gap spacer of a metal-oxide-semiconductor device
UNITED MICROELECTRONICS CORP80 citations96
US6297082B1Oct 2, 2001
Method of fabricating a MOS transistor with local channel ion implantation regions
UNITED MICROELECTRONICS CORP89 citations95
US6274450B1Aug 14, 2001
Method for implementing metal oxide semiconductor field effect transistor
UNITED MICROELECTRONICS CORP20 citations93
US6190981B1Feb 20, 2001
Method for fabricating metal oxide semiconductor
UNITED MICROELECTRONICS CORP48 citations93
US6177336B1Jan 23, 2001
Method for fabricating a metal-oxide semiconductor device
UNITED MICROELECTRONICS CORP40 citations93
US6174778B1Jan 16, 2001
Method of fabricating metal oxide semiconductor
UNITED MICROELECTRONICS CORP34 citations93
US6153478ANov 28, 2000
STI process for eliminating kink effect
UNITED MICROELECTRONICS CORP46 citations93
US6153483ANov 28, 2000
Method for manufacturing MOS device
UNITED MICROELECTRONICS CORP24 citations93
US6083827AJul 4, 2000
Method for fabricating local interconnect
UNITED MICROELECTRONICS CORP22 citations93
US6077769AJun 20, 2000
Method of fabricating a daul damascene structure
UNITED MICROELECTRONICS CORP46 citations93
US6069061AMay 30, 2000
Method for forming polysilicon gate
UNITED MICROELECTRONICS CORP19 citations93
US6057208AMay 2, 2000
Method of forming shallow trench isolation
UNITED MICROELECTRONICS CORP20 citations93
US6048771AApr 11, 2000
Shallow trench isolation technique
UNITED MICROELECTRONICS CORP41 citations93
US6015746AJan 18, 2000
Method of fabricating semiconductor device with a gate-side air-gap structure
UNITED MICROELECTRONICS CORP30 citations93
US6015741AJan 18, 2000
Method for forming self-aligned contact window
UNITED MICROELECTRONICS CORP20 citations93
US6015753AJan 18, 2000
Method of forming a self-aligned silicide
UNITED MICROELECTRONICS CORP26 citations93
US6008118ADec 28, 1999
Method of fabricating a barrier layer
UNITED MICROELECTRONICS CORP25 citations93
US5981383ANov 9, 1999
Method of fabricating a salicide layer of a device electrode
UNITED MICROELECTRONICS CORP32 citations93
US5972763AOct 26, 1999
Method of fabricating an air-gap spacer of a metal-oxide-semiconductor device
UNITED MICROELECTRONICS CORP25 citations93
US5895254AApr 20, 1999
Method of manufacturing shallow trench isolation structure
UNITED MICROELECTRONICS CORP35 citations93
US5874353AFeb 23, 1999
Method of forming a self-aligned silicide device
UNITED MICROELECTRONICS CORP52 citations93
US5780348AJul 14, 1998
Method of making a self-aligned silicide component
UNITED MICROELECTRONICS CORP31 citations93
US6083783AJul 4, 2000
Method of manufacturing complementary metallic-oxide-semiconductor
UNITED MICROELECTRONICS CORP24 citations92
US6100191AAug 8, 2000
Method for forming self-aligned silicide layers on sub-quarter micron VLSI circuits
UNITED MICROELECTRONICS CORP21 citations88
US6902994B2Jun 7, 2005
Method for fabricating transistor having fully silicided gate
UNITED MICROELECTRONICS CORP23 citations86
US6365468B1Apr 2, 2002
Method for forming doped p-type gate with anti-reflection layer
UNITED MICROELECTRONICS CORP16 citations84
US6294432B1Sep 25, 2001
Super halo implant combined with offset spacer process
UNITED MICROELECTRONICS CORP17 citations84
US6187645B1Feb 13, 2001
Method for manufacturing semiconductor device capable of preventing gate-to-drain capacitance and eliminating birds beak formation
UNITED MICROELECTRONICS CORP19 citations84
US6174791B1Jan 16, 2001
Method for a pre-amorphization
UNITED MICROELECTRONICS CORP18 citations83
US6559016B2May 6, 2003
Method of manufacturing low-leakage, high-performance device
UNITED MICROELECTRONICS CORP8 citations74
US6316303B1Nov 13, 2001
Method of fabricating a MOS transistor having SEG silicon
UNITED MICROELECTRONICS CORP13 citations74
US6297112B1Oct 2, 2001
Method of forming a MOS transistor
UNITED MICROELECTRONICS CORP14 citations74
US6274448B1Aug 14, 2001
Method of suppressing junction capacitance of source/drain regions
UNITED MICROELECTRONICS CORP10 citations74
LIN TONY
3 patentsCOOPER BRANDS INC
3 patents(unassigned)
2 patentsPOWER QUOTIENT INTERNAT COMPAN
1 patentUNITED MICOELECTRONICS CORP
1 patentAGILENT TECHNOLOGIES INC
1 patentHSIUNG WILLIAM
1 patentShowing the top 50 of 76 patents by PatentIndex Score.