Inventor
HUANG HENG-SHENG
TW29 patents
Patents
29 patentsUS6064107AMay 16, 2000
Gate structure of a semiconductor device having an air gap
UNITED MICROELECTRONICS CORP88 citations98
US5326722AJul 5, 1994
Polysilicon contact
UNITED MICROELECTRONICS CORP69 citations96
US5920783AJul 6, 1999
Method of fabricating a self-aligned silicide MOSFET
UNITED MICROELECTRONICS CORP96 citations95
US5429988AJul 4, 1995
Process for producing high density conductive lines
UNITED MICROELECTRONICS CORP115 citations95
US5350698ASep 27, 1994
Multilayer polysilicon gate self-align process for VLSI CMOS device
UNITED MICROELECTRONICS CORP57 citations95
US6043545AMar 28, 2000
MOSFET device with two spacers
UNITED MICROELECTRONICS CORP68 citations94
US6153478ANov 28, 2000
STI process for eliminating kink effect
UNITED MICROELECTRONICS CORP46 citations93
US6057208AMay 2, 2000
Method of forming shallow trench isolation
UNITED MICROELECTRONICS CORP20 citations93
US6015746AJan 18, 2000
Method of fabricating semiconductor device with a gate-side air-gap structure
UNITED MICROELECTRONICS CORP30 citations93
US6008118ADec 28, 1999
Method of fabricating a barrier layer
UNITED MICROELECTRONICS CORP25 citations93
US5998287ADec 7, 1999
Process for producing very narrow buried bit lines for non-volatile memory devices
UNITED MICROELECTRONICS CORP22 citations92
US5926729AJul 20, 1999
Method for forming gate oxide layers of various predefined thicknesses
UNITED MICROELECTRONICS CORP31 citations92
US5918131AJun 29, 1999
Method of manufacturing a shallow trench isolation structure
UNITED MICROELECTRONICS CORP30 citations92
US5480819AJan 2, 1996
Method of manufacture of high coupling ratio flash memory cell
UNITED MICROELECTRONICS CORP24 citations92
US5668029ASep 16, 1997
Process for fabricating multi-level read-only memory device
UNITED MICROELECTRONICS CORP21 citations91
US5354700AOct 11, 1994
Method of manufacturing super channel TFT structure
UNITED MICROELECTRONICS CORP29 citations91
US5378646AJan 3, 1995
Process for producing closely spaced conductive lines for integrated circuits
UNITED MICROELECTRONICS CORP31 citations90
US6750673B1Jun 15, 2004
Method for measuring an effective channel length of a MOSFET
UNITED MICROELECTRONICS CORP13 citations80
US5572147ANov 5, 1996
Power supply voltage detector
UNITED MICROELECTRONICS CORP19 citations79
US6197642B1Mar 6, 2001
Method for manufacturing gate terminal
UNITED MICROELECTRONICS CORP8 citations74
US6165913ADec 26, 2000
Manufacturing method for spacer
UNITED MICROELECTRONICS CORP7 citations74
US5989956ANov 23, 1999
DRAM capacitor process
UNITED MICROELECTRONICS CORP9 citations74
US5837579ANov 17, 1998
Rugged polysilicon process for DRAM capacitors
UNITED MICROELECTRONICS CORP11 citations74
US5672534ASep 30, 1997
Process for fabricating capacitor cells in dynamic random access memory (DRAM) chips
UNITED MICROELECTRONICS CORP17 citations74
US5637896AJun 10, 1997
High coupling ratio flash memory cell
UNITED MICROELECTRONICS CORP11 citations74
US6004632ADec 21, 1999
Method for increasing etch removal rate of silicon oxynitride
UNITED MICROELECTRONICS CORP3 citations63
US5659511AAug 19, 1997
Method for measuring the current leakage of a dynamic random access memory capacitive junction
UNITED MICROELECTRONICS CORP3 citations63
US5684417ANov 4, 1997
Data sensing apparatus of a read only memory device
UNITED MICROELECTRONICS CORP3 citations62
US5985717ANov 16, 1999
Method of fabricating a semiconductor device
UNITED MICROELECTRONICS CORP1 citations52