P

Inventor

HORIBA SHINICHI

JP11 patents
⚠️ This page may combine multiple inventors who share the name “HORIBA SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

7 patents
US6136696AOct 24, 2000

Method of forming a semiconductor device with a conductor plug including five dielectric layers, the fourth dielectric layer forming sidewall spacers

NEC CORP28 citations91
US5846878ADec 8, 1998

Method of manufacturing a wiring layer in a semiconductor device

NEC CORP10 citations72
US6150228ANov 21, 2000

Method of manufacturing an SRAM with increased resistance length

NEC CORP5 citations61
US6071785AJun 6, 2000

Low resistance ground wiring in a semiconductor device

NEC CORP3 citations61
US5952724ASep 14, 1999

Semiconductor device incorporating a stepped contact hole

NEC CORP2 citations61
US5744866AApr 28, 1998

Low resistance ground wiring in a semiconductor device

NEC CORP5 citations61
US6429478B1Aug 6, 2002

Semiconductor device which increases the capacity of a capacitor without deepening the contact hole

NEC CORP0 citations40

NEC ELECTRONICS CORP

1 patent
US6580105B1Jun 17, 2003

Solid-state imaging device

NEC ELECTRONICS CORP12 citations73

ELPIDA MEMORY INC

1 patent
US6861319B2Mar 1, 2005

Gate electrode and method of fabricating the same

ELPIDA MEMORY INC2 citations61

KITAMURA EIJI

1 patent
US8729642B2May 20, 2014

Semiconductor device comprising a gate electrode having an opening

KITAMURA EIJI1 citations45

HORIBA SHINICHI

1 patent
US8395232B2Mar 12, 2013

Semiconductor device and method of manufacturing the same

HORIBA SHINICHI0 citations44