Inventor

OKAGAWA HIROAKI

JP25 patents

⚠️ This page may combine multiple inventors who share the name “OKAGAWA HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKAGAWA HIROAKI

MITSUBISHI CABLE IND LTD

GaN single crystal

GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof

Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

GaN single crystal

Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

Method for growing GaN compound semiconductor crystal and semiconductor substrate

Semiconductor light emitting element with reflecting layers

Semiconductor base material and method of manufacturing the material

Group-III nitride based light emitter

Semiconductor light receiving element

Method for growing GaN compound semiconductor crystal and semiconductor substrate

Semiconductor light emitting element

Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein

Semiconductor light emitting element with In GaAlP active layer of specified thickness

MITSUBISHI CHEM CORP

Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

Semiconductor element and method for manufacturing same

SAKUTA HIROAKI

White light-emitting semiconductor devices

White light-emitting semiconductor devices

JOICHI TAKAHIDE

Light emitting device using GaN LED chip

Light emitting device using GaN LED chip

OKAGAWA HIROAKI

Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element

HIRAOKA SHIN

GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein

KUDO HIROMITSU

Nitride semiconductor light-emitting diode device