Inventor
BU JIANKANG
US30 patents
⚠️ This page may combine multiple inventors who share the name “BU JIANKANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
18 patentsUS7483310B1Jan 27, 2009
System and method for providing high endurance low cost CMOS compatible EEPROM devices
NAT SEMICONDUCTOR CORP19 citations92
US7447064B1Nov 4, 2008
System and method for providing a CMOS compatible single poly EEPROM with an NMOS program transistor
NAT SEMICONDUCTOR CORP31 citations87
US7773423B1Aug 10, 2010
Low power, CMOS compatible non-volatile memory cell and related method and memory array
NAT SEMICONDUCTOR CORP14 citations84
US7532496B1May 12, 2009
System and method for providing a low voltage low power EPROM based on gate oxide breakdown
NAT SEMICONDUCTOR CORP12 citations84
US7514940B1Apr 7, 2009
System and method for determining effective channel dimensions of metal oxide semiconductor devices
NAT SEMICONDUCTOR CORP16 citations84
US7471572B1Dec 30, 2008
System and method for enhancing erase performance in a CMOS compatible EEPROM device
NAT SEMICONDUCTOR CORP10 citations84
US8004032B1Aug 23, 2011
System and method for providing low voltage high density multi-bit storage flash memory
NAT SEMICONDUCTOR CORP10 citations81
US7804714B1Sep 28, 2010
System and method for providing an EPROM with different gate oxide thicknesses
NAT SEMICONDUCTOR CORP9 citations80
US7646638B1Jan 12, 2010
Non-volatile memory cell that inhibits over-erasure and related method and memory array
NAT SEMICONDUCTOR CORP7 citations73
US7586792B1Sep 8, 2009
System and method for providing drain avalanche hot carrier programming for non-volatile memory applications
NAT SEMICONDUCTOR CORP7 citations70
US7512499B1Mar 31, 2009
System and method for determining substrate doping density in metal oxide semiconductor devices
NAT SEMICONDUCTOR CORP3 citations59
US7910420B1Mar 22, 2011
System and method for improving CMOS compatible non volatile memory retention reliability
NAT SEMICONDUCTOR CORP3 citations58
US7781289B1Aug 24, 2010
Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits
NAT SEMICONDUCTOR CORP0 citations50
US7777271B1Aug 17, 2010
System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory
NAT SEMICONDUCTOR CORP0 citations50
US8013400B1Sep 6, 2011
Method and system for scaling channel length
NAT SEMICONDUCTOR CORP1 citations48
US7855146B1Dec 21, 2010
Photo-focus modulation method for forming transistor gates and related transistor devices
NAT SEMICONDUCTOR CORP0 citations48
US7790491B1Sep 7, 2010
Method for forming non-volatile memory cells and related apparatus and system
NAT SEMICONDUCTOR CORP0 citations48
US7838203B1Nov 23, 2010
System and method for providing process compliant layout optimization using optical proximity correction to improve CMOS compatible non volatile memory retention reliability
NAT SEMICONDUCTOR CORP0 citations46
IDEAL POWER INC
5 patentsUS11881525B2Jan 23, 2024
Semiconductor device with bi-directional double-base trench power switches
IDEAL POWER INC6 citations82
US12148819B2Nov 19, 2024
System and method for bi-directional trench power switches
IDEAL POWER INC1 citations59
US12388442B2Aug 12, 2025
Unidirectional hybrid switch circuit
IDEAL POWER INC0 citations55
US12506476B2Dec 23, 2025
Methods and systems of operating a double-sided double-base bipolar junction transistor
IDEAL POWER INC0 citations54
US12506475B2Dec 23, 2025
Hybrid switch circuit with bidirectional double-base bipolar junction transistors
IDEAL POWER INC0 citations45
BU JIANKANG
4 patentsUS8274824B1Sep 25, 2012
High-performance CMOS-compatible non-volatile memory cell and related method
BU JIANKANG1 citations50
US8114738B2Feb 14, 2012
System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory
BU JIANKANG0 citations48
US8241975B2Aug 14, 2012
System and method for providing low voltage high density multi-bit storage flash memory
BU JIANKANG1 citations47
US8198708B2Jun 12, 2012
System and method for improving CMOS compatible non volatile memory retention reliability
BU JIANKANG0 citations46