Inventor

CHO WOO-YEONG

KR111 patents

⚠️ This page may combine multiple inventors who share the name “CHO WOO-YEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO WOO-YEONG

SAMSUNG ELECTRONICS CO LTD

Variable resistance memory device and method of manufacturing the same

Semiconductor memory device having a three-dimensional cell array structure

Semiconductor memory device and method for reducing cell activation during write operations

Phase change memory devices and systems, and related programming methods

Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement

Device and method for pulse width control in a phase change memory device

Data read circuit for use in a semiconductor memory and a memory thereof

Phase change memories and/or methods of programming phase change memories using sequential reset control

Writing driver circuit of phase-change memory

Phase random access memory with high density

Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor

Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices

Resistance random access memory having common source line

Nonvolatile memory devices that utilize read/write merge circuits

Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory

Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device

Variable resistive memory wordline switch

Phase change random access memory

Phase change random access memory and related methods of operation

Magneto-resistive RAM having multi-bit cell array structure

Phase change random access memory (PRAM) device having variable drive voltages

Phase-change memory device

Control of set/reset pulse in response to peripheral temperature in PRAM device

Phase change random access memory device having variable drive voltage circuit

Phase change memory device providing compensation for leakage current

Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range

Reference voltage generating circuit using active resistance device

Magnetic random access memory device capable of providing a constant current to a reference cell

Phase change memory device generating program current and method thereof

Magnetic memory device and method of fabricating the same

Phase change memory device and related programming method

Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature

Phase change memory devices employing cell diodes and methods of fabricating the same

Phase-changeable memory device and read method thereof

Device and method for pulse width control in a phase change memory device

PRAM and method of firing memory cells

Variable resistance memory device and system

Nonvolatile memory device using resistance material

Bi-directional resistive random access memory capable of multi-decoding and method of writing data thereto

Memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methods

Nonvolatile memory device having memory and reference cells

Phase change random access memory

Nonvolatile memory devices having multi-filament variable resistivity memory cells therein

Semiconductor memory device and memory system including semiconductor memory device

Bias voltage generator and method generating bias voltage for semiconductor memory device

CHO WOO-YEONG

Phase change memory devices and systems, and related programming methods

Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device

Phase change memory devices and systems, and related programming methods

BAE JUN-SOO

Phase change memory devices and systems, and related programming methods

BAE JUNSOO

Resistance variable memory devices and read methods thereof